Silicon nanowire n -type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain

Uniaxial tensile strain effects on [110]-directed silicon nanowire n -type metal-oxide-semiconductor field-effect transistors and single-electron transistors (SETs) were experimentally studied for the first time. It is found that strain effect is still effective in extremely narrow nanowire n -FETs and that transverse tensile strain offers more favorable effects than longitudinal one in terms of I on ∕ I off ratio. In SETs, complicated strain effect at oscillation region, attributed to the modulation of potential structure and rearrangement of tunneling condition, is observed.