Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering
We investigated effects of hydrogen passivation of edges of armchair graphene nanoribbons (AGNRs) on their electronic properties using first-principles method. The calculated band gaps of the AGNRs vary continually over a range of 1.6 eV as a function of a percentage of sp3-like bonds at the edges....
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| Veröffentlicht in: | Applied physics letters 2009-03, Vol.94 (12) |
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| container_title | Applied physics letters |
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| creator | Lu, Y. H. Wu, R. Q. Shen, L. Yang, M. Sha, Z. D. Cai, Y. Q. He, P. M. Feng, Y. P. |
| description | We investigated effects of hydrogen passivation of edges of armchair graphene nanoribbons (AGNRs) on their electronic properties using first-principles method. The calculated band gaps of the AGNRs vary continually over a range of 1.6 eV as a function of a percentage of sp3-like bonds at the edges. This provides a simple way for band gap engineering of graphene as the relative stability of sp2 and sp3-like bonds at the edges of the AGNRs depends on the chemical potential of hydrogen gas, and the composition of the sp2 and sp3-like bonds at the edges of the AGNRs can be easily controlled experimentally via temperature and pressure of H2 gas. |
| doi_str_mv | 10.1063/1.3103551 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3103551</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3103551</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-592070a71f1a94dd159754370f900eab1ca050f40119a2fc26d5fbef52c9f2583</originalsourceid><addsrcrecordid>eNotkDFPwzAUhC0EEqUw8A-8MqS8Z9dNPaKqUKRKLDBHL85zatQ6kZ0i-u9JRZc7fdLdDSfEI8IMYaGfcaYRtDF4JSYIZVloxOW1mACALhbW4K24y_l7RKO0nojftffshiw7L7lpWfaUc_ihIXRR1ie5OzWpaznKEXk_JlMXg5N5SEc3HBOfe5QObkchyTZRv-PIMlLsUqjrsUSxkfVZWuolxzZE5hRiey9uPO0zP1x8Kr5e15-rTbH9eHtfvWwLp6wZCmMVlEAleiQ7bxo0tjRzXYK3AEw1OgIDfg6IlpR3atEYX7M3ylmvzFJPxdP_rktdzol91adwoHSqEKrzZRVWl8v0H_CDX6s</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Lu, Y. H. ; Wu, R. Q. ; Shen, L. ; Yang, M. ; Sha, Z. D. ; Cai, Y. Q. ; He, P. M. ; Feng, Y. P.</creator><creatorcontrib>Lu, Y. H. ; Wu, R. Q. ; Shen, L. ; Yang, M. ; Sha, Z. D. ; Cai, Y. Q. ; He, P. M. ; Feng, Y. P.</creatorcontrib><description>We investigated effects of hydrogen passivation of edges of armchair graphene nanoribbons (AGNRs) on their electronic properties using first-principles method. The calculated band gaps of the AGNRs vary continually over a range of 1.6 eV as a function of a percentage of sp3-like bonds at the edges. This provides a simple way for band gap engineering of graphene as the relative stability of sp2 and sp3-like bonds at the edges of the AGNRs depends on the chemical potential of hydrogen gas, and the composition of the sp2 and sp3-like bonds at the edges of the AGNRs can be easily controlled experimentally via temperature and pressure of H2 gas.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3103551</identifier><language>eng</language><ispartof>Applied physics letters, 2009-03, Vol.94 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-592070a71f1a94dd159754370f900eab1ca050f40119a2fc26d5fbef52c9f2583</citedby><cites>FETCH-LOGICAL-c295t-592070a71f1a94dd159754370f900eab1ca050f40119a2fc26d5fbef52c9f2583</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Lu, Y. H.</creatorcontrib><creatorcontrib>Wu, R. Q.</creatorcontrib><creatorcontrib>Shen, L.</creatorcontrib><creatorcontrib>Yang, M.</creatorcontrib><creatorcontrib>Sha, Z. D.</creatorcontrib><creatorcontrib>Cai, Y. Q.</creatorcontrib><creatorcontrib>He, P. M.</creatorcontrib><creatorcontrib>Feng, Y. P.</creatorcontrib><title>Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering</title><title>Applied physics letters</title><description>We investigated effects of hydrogen passivation of edges of armchair graphene nanoribbons (AGNRs) on their electronic properties using first-principles method. The calculated band gaps of the AGNRs vary continually over a range of 1.6 eV as a function of a percentage of sp3-like bonds at the edges. This provides a simple way for band gap engineering of graphene as the relative stability of sp2 and sp3-like bonds at the edges of the AGNRs depends on the chemical potential of hydrogen gas, and the composition of the sp2 and sp3-like bonds at the edges of the AGNRs can be easily controlled experimentally via temperature and pressure of H2 gas.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkDFPwzAUhC0EEqUw8A-8MqS8Z9dNPaKqUKRKLDBHL85zatQ6kZ0i-u9JRZc7fdLdDSfEI8IMYaGfcaYRtDF4JSYIZVloxOW1mACALhbW4K24y_l7RKO0nojftffshiw7L7lpWfaUc_ihIXRR1ie5OzWpaznKEXk_JlMXg5N5SEc3HBOfe5QObkchyTZRv-PIMlLsUqjrsUSxkfVZWuolxzZE5hRiey9uPO0zP1x8Kr5e15-rTbH9eHtfvWwLp6wZCmMVlEAleiQ7bxo0tjRzXYK3AEw1OgIDfg6IlpR3atEYX7M3ylmvzFJPxdP_rktdzol91adwoHSqEKrzZRVWl8v0H_CDX6s</recordid><startdate>20090323</startdate><enddate>20090323</enddate><creator>Lu, Y. H.</creator><creator>Wu, R. Q.</creator><creator>Shen, L.</creator><creator>Yang, M.</creator><creator>Sha, Z. D.</creator><creator>Cai, Y. Q.</creator><creator>He, P. M.</creator><creator>Feng, Y. P.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090323</creationdate><title>Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering</title><author>Lu, Y. H. ; Wu, R. Q. ; Shen, L. ; Yang, M. ; Sha, Z. D. ; Cai, Y. Q. ; He, P. M. ; Feng, Y. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-592070a71f1a94dd159754370f900eab1ca050f40119a2fc26d5fbef52c9f2583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Y. H.</creatorcontrib><creatorcontrib>Wu, R. Q.</creatorcontrib><creatorcontrib>Shen, L.</creatorcontrib><creatorcontrib>Yang, M.</creatorcontrib><creatorcontrib>Sha, Z. D.</creatorcontrib><creatorcontrib>Cai, Y. Q.</creatorcontrib><creatorcontrib>He, P. M.</creatorcontrib><creatorcontrib>Feng, Y. P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Y. H.</au><au>Wu, R. Q.</au><au>Shen, L.</au><au>Yang, M.</au><au>Sha, Z. D.</au><au>Cai, Y. Q.</au><au>He, P. M.</au><au>Feng, Y. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering</atitle><jtitle>Applied physics letters</jtitle><date>2009-03-23</date><risdate>2009</risdate><volume>94</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We investigated effects of hydrogen passivation of edges of armchair graphene nanoribbons (AGNRs) on their electronic properties using first-principles method. The calculated band gaps of the AGNRs vary continually over a range of 1.6 eV as a function of a percentage of sp3-like bonds at the edges. This provides a simple way for band gap engineering of graphene as the relative stability of sp2 and sp3-like bonds at the edges of the AGNRs depends on the chemical potential of hydrogen gas, and the composition of the sp2 and sp3-like bonds at the edges of the AGNRs can be easily controlled experimentally via temperature and pressure of H2 gas.</abstract><doi>10.1063/1.3103551</doi></addata></record> |
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| ispartof | Applied physics letters, 2009-03, Vol.94 (12) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineering |
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