Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer
Current-voltage ( I - V ) curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the I - V curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was sign...
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| Veröffentlicht in: | Applied physics letters 2009-03, Vol.94 (11), p.112101-112101-3 |
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| Sprache: | eng |
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| container_end_page | 112101-3 |
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| container_issue | 11 |
| container_start_page | 112101 |
| container_title | Applied physics letters |
| container_volume | 94 |
| creator | Ham, Jung Hoon Oh, Do Hyun Cho, Sung Hwan Jung, Jae Hun Kim, Tae Whan Ryu, Eui Dock Kim, Sang Wook |
| description | Current-voltage
(
I
-
V
)
curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the
I
-
V
curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental
I
-
V
data. |
| doi_str_mv | 10.1063/1.3097805 |
| format | Article |
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(
I
-
V
)
curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the
I
-
V
curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental
I
-
V
data.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3097805</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-03, Vol.94 (11), p.112101-112101-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-3e4471a53276bc205a63da3923202758ccf30a623dfc98491216f26e89c96d6c3</citedby><cites>FETCH-LOGICAL-c284t-3e4471a53276bc205a63da3923202758ccf30a623dfc98491216f26e89c96d6c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3097805$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4497,27903,27904,76131,76137</link.rule.ids></links><search><creatorcontrib>Ham, Jung Hoon</creatorcontrib><creatorcontrib>Oh, Do Hyun</creatorcontrib><creatorcontrib>Cho, Sung Hwan</creatorcontrib><creatorcontrib>Jung, Jae Hun</creatorcontrib><creatorcontrib>Kim, Tae Whan</creatorcontrib><creatorcontrib>Ryu, Eui Dock</creatorcontrib><creatorcontrib>Kim, Sang Wook</creatorcontrib><title>Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer</title><title>Applied physics letters</title><description>Current-voltage
(
I
-
V
)
curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the
I
-
V
curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental
I
-
V
data.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKAzEUhoMoWKsL3yBbF9FcOpmZjSDFGxQU1I2b4Zg5QyO5lCS0zBP5mo5Y3Ln6-eH7z4GPkHPBLwXX6kpcKt7WDa8OyEzwumZKiOaQzDjnium2EsfkJOfPqVZSqRn5WkJKFhMtCULexFSoR7OGYLPPNA40xLCNDop1SHfJFmQxGGQJoWcewsiK9ZinkY9ppD1urZnqzpY1fQzP7D28UBMTsrxG52iAEDeQijVuotB_YN9jT22gQDfRjR7LenT0J8CkcfqL1MGI6ZQcDeAynu1zTt7ubl-XD2z1dP-4vFkxI5tFYQoXi1pApWStP4zkFWjVg2qlklzWVWPMoDhoqfrBtM2iFVLoQWpsWtPqXhs1Jxe_d02KOSccuk2yHtLYCd79GO5Etzc8sde_bDa2TIZi-B_ea-7-NHce1TcZqIdY</recordid><startdate>20090316</startdate><enddate>20090316</enddate><creator>Ham, Jung Hoon</creator><creator>Oh, Do Hyun</creator><creator>Cho, Sung Hwan</creator><creator>Jung, Jae Hun</creator><creator>Kim, Tae Whan</creator><creator>Ryu, Eui Dock</creator><creator>Kim, Sang Wook</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090316</creationdate><title>Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer</title><author>Ham, Jung Hoon ; Oh, Do Hyun ; Cho, Sung Hwan ; Jung, Jae Hun ; Kim, Tae Whan ; Ryu, Eui Dock ; Kim, Sang Wook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-3e4471a53276bc205a63da3923202758ccf30a623dfc98491216f26e89c96d6c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ham, Jung Hoon</creatorcontrib><creatorcontrib>Oh, Do Hyun</creatorcontrib><creatorcontrib>Cho, Sung Hwan</creatorcontrib><creatorcontrib>Jung, Jae Hun</creatorcontrib><creatorcontrib>Kim, Tae Whan</creatorcontrib><creatorcontrib>Ryu, Eui Dock</creatorcontrib><creatorcontrib>Kim, Sang Wook</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ham, Jung Hoon</au><au>Oh, Do Hyun</au><au>Cho, Sung Hwan</au><au>Jung, Jae Hun</au><au>Kim, Tae Whan</au><au>Ryu, Eui Dock</au><au>Kim, Sang Wook</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer</atitle><jtitle>Applied physics letters</jtitle><date>2009-03-16</date><risdate>2009</risdate><volume>94</volume><issue>11</issue><spage>112101</spage><epage>112101-3</epage><pages>112101-112101-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Current-voltage
(
I
-
V
)
curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the
I
-
V
curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental
I
-
V
data.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3097805</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2009-03, Vol.94 (11), p.112101-112101-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3097805 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer |
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