Shape transition in very large germanium islands on Si(111)

Ge islands with areas up to hundreds of μ m 2 were grown on Si(111). These islands, grown above 750 ° C and at a deposition rate of 1 monolayer/min, become decreasingly compact with increasing size and can have nonuniform cross sections with heights reaching over 500 nm. The largest islands are rami...

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Veröffentlicht in:	Applied physics letters 2009-03, Vol.94 (10), p.103109-103109-3
Hauptverfasser:	MacLeod, J. M., Lipton-Duffin, J. A., Lanke, U., Urquhart, S. G., Rosei, F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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