Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiC

Threading dislocations and their transformation into stacking faults (SFs) are observed in p-type 4H-SiC epitaxial layers by high voltage transmission electron microscope. Homoepitaxial growth and in situ aluminum doping of 4H-SiC epitaxial layers are carried out using the organosilicon precursor bi...

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Veröffentlicht in:	Applied physics letters 2009-03, Vol.94 (11)
Hauptverfasser:	Song, Ho Keun, Moon, Jeong Hyun, Kim, Hyeong Joon, Mehregany, Mehran
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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