The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is s...

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Veröffentlicht in:Applied physics letters 2009-02, Vol.94 (8), p.081113-081113-3
Hauptverfasser: Zhu, Di, Xu, Jiuru, Noemaun, Ahmed N., Kim, Jong Kyu, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D.
Format: Artikel
Sprache:eng
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