The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is s...
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Veröffentlicht in: | Applied physics letters 2009-02, Vol.94 (8), p.081113-081113-3 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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