Current limiting effects of photoactivated charge domain in semi-insulating GaAs photoconductive switch

Current limiting effects of photoactivated charge domain in semi-insulating GaAs photoconductive switch

The photoactivated charge domain (PACD) plays an important role in the nonlinear modes of semi-insulating GaAs and LnP photoconductive switches. The formation and transporting process of photoactivated charge domain are discussed in this paper, which indicate that it is the shielded electric field t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2009-02, Vol.94 (7), p.072110-072110-3
Hauptverfasser: Shi, Wei, Qu, Guanghui, Xu, Ming, Xue, Hong, Ji, Weili, Zhang, Lin, Tian, Liqiang
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 072110-3
container_issue 7
container_start_page 072110
container_title Applied physics letters
container_volume 94
creator Shi, Wei
Qu, Guanghui
Xu, Ming
Xue, Hong
Ji, Weili
Zhang, Lin
Tian, Liqiang
description The photoactivated charge domain (PACD) plays an important role in the nonlinear modes of semi-insulating GaAs and LnP photoconductive switches. The formation and transporting process of photoactivated charge domain are discussed in this paper, which indicate that it is the shielded electric field that induced the unique distribution and evolution law of the PACD. The PACD restricts space-charge current in the photoconductor and the output current of the photoconductive switch by its shielded effect.
doi_str_mv 10.1063/1.3086886
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3086886</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-490e37a80be9820935276494e1da29eb0e1327115d9481d33f654fdfa5d6bf2f3</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKsH_0GuHrZmdnazyUUoRatQ8KLnkOajjXR3S5JV_PdubT0KAy8DzzswDyG3wGbAON7DDJngQvAzMgHWNAUCiHMyYYxhwWUNl-QqpY9xrUvECdkshhhdl-kutCGHbkOd987kRHtP99s-99rk8Kmzs9Rsddw4avtWh46Ok1wbitClYad_q0s9T8eS6Ts7HIqOpq-QzfaaXHi9S-7mlFPy_vT4tnguVq_Ll8V8VRgEmYtKMoeNFmztpCiZxLpseCUrB1aX0q2ZAywbgNrKSoBF9LyuvPW6tnztS49Tcne8a2KfUnRe7WNodfxWwNTBkAJ1MjSyD0c2mZDHD_ruf_ikSf1pUqMm_AGtS2-b</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Current limiting effects of photoactivated charge domain in semi-insulating GaAs photoconductive switch</title><source>American Institute of Physics (AIP) Journals</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Shi, Wei ; Qu, Guanghui ; Xu, Ming ; Xue, Hong ; Ji, Weili ; Zhang, Lin ; Tian, Liqiang</creator><creatorcontrib>Shi, Wei ; Qu, Guanghui ; Xu, Ming ; Xue, Hong ; Ji, Weili ; Zhang, Lin ; Tian, Liqiang</creatorcontrib><description>The photoactivated charge domain (PACD) plays an important role in the nonlinear modes of semi-insulating GaAs and LnP photoconductive switches. The formation and transporting process of photoactivated charge domain are discussed in this paper, which indicate that it is the shielded electric field that induced the unique distribution and evolution law of the PACD. The PACD restricts space-charge current in the photoconductor and the output current of the photoconductive switch by its shielded effect.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3086886</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-02, Vol.94 (7), p.072110-072110-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-490e37a80be9820935276494e1da29eb0e1327115d9481d33f654fdfa5d6bf2f3</citedby><cites>FETCH-LOGICAL-c319t-490e37a80be9820935276494e1da29eb0e1327115d9481d33f654fdfa5d6bf2f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3086886$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1558,4502,27915,27916,76145,76151</link.rule.ids></links><search><creatorcontrib>Shi, Wei</creatorcontrib><creatorcontrib>Qu, Guanghui</creatorcontrib><creatorcontrib>Xu, Ming</creatorcontrib><creatorcontrib>Xue, Hong</creatorcontrib><creatorcontrib>Ji, Weili</creatorcontrib><creatorcontrib>Zhang, Lin</creatorcontrib><creatorcontrib>Tian, Liqiang</creatorcontrib><title>Current limiting effects of photoactivated charge domain in semi-insulating GaAs photoconductive switch</title><title>Applied physics letters</title><description>The photoactivated charge domain (PACD) plays an important role in the nonlinear modes of semi-insulating GaAs and LnP photoconductive switches. The formation and transporting process of photoactivated charge domain are discussed in this paper, which indicate that it is the shielded electric field that induced the unique distribution and evolution law of the PACD. The PACD restricts space-charge current in the photoconductor and the output current of the photoconductive switch by its shielded effect.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0GuHrZmdnazyUUoRatQ8KLnkOajjXR3S5JV_PdubT0KAy8DzzswDyG3wGbAON7DDJngQvAzMgHWNAUCiHMyYYxhwWUNl-QqpY9xrUvECdkshhhdl-kutCGHbkOd987kRHtP99s-99rk8Kmzs9Rsddw4avtWh46Ok1wbitClYad_q0s9T8eS6Ts7HIqOpq-QzfaaXHi9S-7mlFPy_vT4tnguVq_Ll8V8VRgEmYtKMoeNFmztpCiZxLpseCUrB1aX0q2ZAywbgNrKSoBF9LyuvPW6tnztS49Tcne8a2KfUnRe7WNodfxWwNTBkAJ1MjSyD0c2mZDHD_ruf_ikSf1pUqMm_AGtS2-b</recordid><startdate>20090216</startdate><enddate>20090216</enddate><creator>Shi, Wei</creator><creator>Qu, Guanghui</creator><creator>Xu, Ming</creator><creator>Xue, Hong</creator><creator>Ji, Weili</creator><creator>Zhang, Lin</creator><creator>Tian, Liqiang</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090216</creationdate><title>Current limiting effects of photoactivated charge domain in semi-insulating GaAs photoconductive switch</title><author>Shi, Wei ; Qu, Guanghui ; Xu, Ming ; Xue, Hong ; Ji, Weili ; Zhang, Lin ; Tian, Liqiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-490e37a80be9820935276494e1da29eb0e1327115d9481d33f654fdfa5d6bf2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shi, Wei</creatorcontrib><creatorcontrib>Qu, Guanghui</creatorcontrib><creatorcontrib>Xu, Ming</creatorcontrib><creatorcontrib>Xue, Hong</creatorcontrib><creatorcontrib>Ji, Weili</creatorcontrib><creatorcontrib>Zhang, Lin</creatorcontrib><creatorcontrib>Tian, Liqiang</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shi, Wei</au><au>Qu, Guanghui</au><au>Xu, Ming</au><au>Xue, Hong</au><au>Ji, Weili</au><au>Zhang, Lin</au><au>Tian, Liqiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current limiting effects of photoactivated charge domain in semi-insulating GaAs photoconductive switch</atitle><jtitle>Applied physics letters</jtitle><date>2009-02-16</date><risdate>2009</risdate><volume>94</volume><issue>7</issue><spage>072110</spage><epage>072110-3</epage><pages>072110-072110-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The photoactivated charge domain (PACD) plays an important role in the nonlinear modes of semi-insulating GaAs and LnP photoconductive switches. The formation and transporting process of photoactivated charge domain are discussed in this paper, which indicate that it is the shielded electric field that induced the unique distribution and evolution law of the PACD. The PACD restricts space-charge current in the photoconductor and the output current of the photoconductive switch by its shielded effect.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3086886</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2009-02, Vol.94 (7), p.072110-072110-3
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3086886
source American Institute of Physics (AIP) Journals; AIP Digital Archive; Alma/SFX Local Collection
title Current limiting effects of photoactivated charge domain in semi-insulating GaAs photoconductive switch
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T19%3A26%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Current%20limiting%20effects%20of%20photoactivated%20charge%20domain%20in%20semi-insulating%20GaAs%20photoconductive%20switch&rft.jtitle=Applied%20physics%20letters&rft.au=Shi,%20Wei&rft.date=2009-02-16&rft.volume=94&rft.issue=7&rft.spage=072110&rft.epage=072110-3&rft.pages=072110-072110-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3086886&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true