Determination of the mobility gap of intrinsic μ c - Si : H in p - i - n solar cells
Microcrystalline silicon ( μ c - Si : H ) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of μ c - Si...
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| Veröffentlicht in: | Journal of applied physics 2009-02, Vol.105 (4), p.044502-044502-10 |
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| container_end_page | 044502-10 |
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| container_issue | 4 |
| container_start_page | 044502 |
| container_title | Journal of applied physics |
| container_volume | 105 |
| creator | Pieters, B. E. Stiebig, H. Zeman, M. van Swaaij, R. A. C. M. M. |
| description | Microcrystalline silicon
(
μ
c
-
Si
:
H
)
is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of
μ
c
-
Si
:
H
material. Commonly a value of
1.1
eV
is found, similar to the bandgap of crystalline silicon. However, in other studies mobility gap values have been reported to be in the range of
1.48
-
1.59
eV
, depending on crystalline volume fraction. Indeed, for the accurate modeling of
μ
c
-
Si
:
H
solar cells, it is paramount that key parameters such as the mobility gap are accurately determined. A method is presented to determine the mobility gap of the intrinsic layer in a
p
-
i
-
n
device from the voltage-dependent dark current activation energy. We thus determined a value of
1.19
eV
for the mobility gap of the intrinsic layer of an
μ
c
-
Si
:
H
p
-
i
-
n
device. We analyze the obtained results in detail through numerical simulations of the
μ
c
-
Si
:
H
p
-
i
-
n
device. The applicability of the method for other than the investigated devices is discussed with the aid of numerical simulations. |
| doi_str_mv | 10.1063/1.3078044 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3078044</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-bacb506b21fa98950974a38494bab5f721b7f813c84a66a36000057df878e95a3</originalsourceid><addsrcrecordid>eNp1kMFKAzEQhoMouFYPvkGuHrZONskm8SBIrVYoeNCeQxITjWx3S5JL381n8Jnc2l48ODAM8_MxMB9ClwSmBFp6TaYUhATGjlBFQKpacA7HqAJoSC2VUKfoLOdPAEIkVRVa3fvi0zr2psShx0PA5cPj9WBjF8sWv5vNLot9SbHP0eHvL-xwjV8ivsGLMcebcYtj9zgPnUnY-a7L5-gkmC77i8OcoNXD_HW2qJfPj0-zu2XtGslKbY2zHFrbkGCUVByUYIZKppg1lgfRECuCJNRJZtrW0BbG4uItSCG94oZO0NX-rktDzskHvUlxbdJWE9A7H5rog4-Rvd2z2cXy--3_8B8pegh6lEJ_ANMxZVc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Determination of the mobility gap of intrinsic μ c - Si : H in p - i - n solar cells</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Pieters, B. E. ; Stiebig, H. ; Zeman, M. ; van Swaaij, R. A. C. M. M.</creator><creatorcontrib>Pieters, B. E. ; Stiebig, H. ; Zeman, M. ; van Swaaij, R. A. C. M. M.</creatorcontrib><description>Microcrystalline silicon
(
μ
c
-
Si
:
H
)
is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of
μ
c
-
Si
:
H
material. Commonly a value of
1.1
eV
is found, similar to the bandgap of crystalline silicon. However, in other studies mobility gap values have been reported to be in the range of
1.48
-
1.59
eV
, depending on crystalline volume fraction. Indeed, for the accurate modeling of
μ
c
-
Si
:
H
solar cells, it is paramount that key parameters such as the mobility gap are accurately determined. A method is presented to determine the mobility gap of the intrinsic layer in a
p
-
i
-
n
device from the voltage-dependent dark current activation energy. We thus determined a value of
1.19
eV
for the mobility gap of the intrinsic layer of an
μ
c
-
Si
:
H
p
-
i
-
n
device. We analyze the obtained results in detail through numerical simulations of the
μ
c
-
Si
:
H
p
-
i
-
n
device. The applicability of the method for other than the investigated devices is discussed with the aid of numerical simulations.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3078044</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2009-02, Vol.105 (4), p.044502-044502-10</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-bacb506b21fa98950974a38494bab5f721b7f813c84a66a36000057df878e95a3</citedby><cites>FETCH-LOGICAL-c284t-bacb506b21fa98950974a38494bab5f721b7f813c84a66a36000057df878e95a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3078044$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Pieters, B. E.</creatorcontrib><creatorcontrib>Stiebig, H.</creatorcontrib><creatorcontrib>Zeman, M.</creatorcontrib><creatorcontrib>van Swaaij, R. A. C. M. M.</creatorcontrib><title>Determination of the mobility gap of intrinsic μ c - Si : H in p - i - n solar cells</title><title>Journal of applied physics</title><description>Microcrystalline silicon
(
μ
c
-
Si
:
H
)
is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of
μ
c
-
Si
:
H
material. Commonly a value of
1.1
eV
is found, similar to the bandgap of crystalline silicon. However, in other studies mobility gap values have been reported to be in the range of
1.48
-
1.59
eV
, depending on crystalline volume fraction. Indeed, for the accurate modeling of
μ
c
-
Si
:
H
solar cells, it is paramount that key parameters such as the mobility gap are accurately determined. A method is presented to determine the mobility gap of the intrinsic layer in a
p
-
i
-
n
device from the voltage-dependent dark current activation energy. We thus determined a value of
1.19
eV
for the mobility gap of the intrinsic layer of an
μ
c
-
Si
:
H
p
-
i
-
n
device. We analyze the obtained results in detail through numerical simulations of the
μ
c
-
Si
:
H
p
-
i
-
n
device. The applicability of the method for other than the investigated devices is discussed with the aid of numerical simulations.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kMFKAzEQhoMouFYPvkGuHrZONskm8SBIrVYoeNCeQxITjWx3S5JL381n8Jnc2l48ODAM8_MxMB9ClwSmBFp6TaYUhATGjlBFQKpacA7HqAJoSC2VUKfoLOdPAEIkVRVa3fvi0zr2psShx0PA5cPj9WBjF8sWv5vNLot9SbHP0eHvL-xwjV8ivsGLMcebcYtj9zgPnUnY-a7L5-gkmC77i8OcoNXD_HW2qJfPj0-zu2XtGslKbY2zHFrbkGCUVByUYIZKppg1lgfRECuCJNRJZtrW0BbG4uItSCG94oZO0NX-rktDzskHvUlxbdJWE9A7H5rog4-Rvd2z2cXy--3_8B8pegh6lEJ_ANMxZVc</recordid><startdate>20090215</startdate><enddate>20090215</enddate><creator>Pieters, B. E.</creator><creator>Stiebig, H.</creator><creator>Zeman, M.</creator><creator>van Swaaij, R. A. C. M. M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090215</creationdate><title>Determination of the mobility gap of intrinsic μ c - Si : H in p - i - n solar cells</title><author>Pieters, B. E. ; Stiebig, H. ; Zeman, M. ; van Swaaij, R. A. C. M. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-bacb506b21fa98950974a38494bab5f721b7f813c84a66a36000057df878e95a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pieters, B. E.</creatorcontrib><creatorcontrib>Stiebig, H.</creatorcontrib><creatorcontrib>Zeman, M.</creatorcontrib><creatorcontrib>van Swaaij, R. A. C. M. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pieters, B. E.</au><au>Stiebig, H.</au><au>Zeman, M.</au><au>van Swaaij, R. A. C. M. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of the mobility gap of intrinsic μ c - Si : H in p - i - n solar cells</atitle><jtitle>Journal of applied physics</jtitle><date>2009-02-15</date><risdate>2009</risdate><volume>105</volume><issue>4</issue><spage>044502</spage><epage>044502-10</epage><pages>044502-044502-10</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Microcrystalline silicon
(
μ
c
-
Si
:
H
)
is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of
μ
c
-
Si
:
H
material. Commonly a value of
1.1
eV
is found, similar to the bandgap of crystalline silicon. However, in other studies mobility gap values have been reported to be in the range of
1.48
-
1.59
eV
, depending on crystalline volume fraction. Indeed, for the accurate modeling of
μ
c
-
Si
:
H
solar cells, it is paramount that key parameters such as the mobility gap are accurately determined. A method is presented to determine the mobility gap of the intrinsic layer in a
p
-
i
-
n
device from the voltage-dependent dark current activation energy. We thus determined a value of
1.19
eV
for the mobility gap of the intrinsic layer of an
μ
c
-
Si
:
H
p
-
i
-
n
device. We analyze the obtained results in detail through numerical simulations of the
μ
c
-
Si
:
H
p
-
i
-
n
device. The applicability of the method for other than the investigated devices is discussed with the aid of numerical simulations.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3078044</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2009-02, Vol.105 (4), p.044502-044502-10 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3078044 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Determination of the mobility gap of intrinsic μ c - Si : H in p - i - n solar cells |
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