High-yield dielectrophoretic assembly of two-dimensional graphene nanostructures
Graphene handling is still dominated by serial mechanical exfoliation, which may well facilitate measurements in a laboratory environment but does not allow reliable larger-scale integration. Herein we demonstrate the controlled, high-yield ( > 90 % ) , site-selective deposition of ultrathin few-...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2009-02, Vol.94 (5), p.053110-053110-3 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 053110-3 |
|---|---|
| container_issue | 5 |
| container_start_page | 053110 |
| container_title | Applied physics letters |
| container_volume | 94 |
| creator | Burg, Brian R. Lütolf, Fabian Schneider, Julian Schirmer, Niklas C. Schwamb, Timo Poulikakos, Dimos |
| description | Graphene handling is still dominated by serial mechanical exfoliation, which may well facilitate measurements in a laboratory environment but does not allow reliable larger-scale integration. Herein we demonstrate the controlled, high-yield
(
>
90
%
)
, site-selective deposition of ultrathin few-layer (three to ten) graphene oxide by dielectrophoresis between prefabricated electrodes. Individual layers are found near the edges. Initially insulating, thermal reduction at
450
°
C
thins out the two-dimensional few-atom thick films and dramatically reduces electrical resistances down to
40
k
Ω
. Conductivities between 15 and 36 S/cm are obtained. The introduced method permits the nonintrusive, parallel, large-scale assembly of soluble two-dimensional nanostructures and sheets. |
| doi_str_mv | 10.1063/1.3077197 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3077197</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-7164f1074483126b9189faa69e6e29a48bba86a3371d7bad8c4af60ffc41af233</originalsourceid><addsrcrecordid>eNp1kEFLwzAUx4MoWKcHv0GvHjLzljZtL4IMdcJAD3oOr2myRtpmJBmyb2_mhjcv770__Hn8-BFyC2wOTPB7mHNWVdBUZySDdFEOUJ-TjDHGqWhKuCRXIXylWC44z8j7ym56urd66PIuTa2id9veeR2tyjEEPbbDPncmj9-OdnbUU7BuwiHfeNz2etL5hJML0e9U3HkdrsmFwSHom9Oekc_np4_liq7fXl6Xj2uqeMkirUAUJgEWRc1hIdoG6sYgikYLvWiwqNsWa4GcV9BVLXa1KtAIZowqAE1Cn5G741_lXQheG7n1dkS_l8DkQYUEeVKRug_HblA2Ykz8_5cPPuSvD_nng_8AFOJnzg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-yield dielectrophoretic assembly of two-dimensional graphene nanostructures</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Burg, Brian R. ; Lütolf, Fabian ; Schneider, Julian ; Schirmer, Niklas C. ; Schwamb, Timo ; Poulikakos, Dimos</creator><creatorcontrib>Burg, Brian R. ; Lütolf, Fabian ; Schneider, Julian ; Schirmer, Niklas C. ; Schwamb, Timo ; Poulikakos, Dimos</creatorcontrib><description>Graphene handling is still dominated by serial mechanical exfoliation, which may well facilitate measurements in a laboratory environment but does not allow reliable larger-scale integration. Herein we demonstrate the controlled, high-yield
(
>
90
%
)
, site-selective deposition of ultrathin few-layer (three to ten) graphene oxide by dielectrophoresis between prefabricated electrodes. Individual layers are found near the edges. Initially insulating, thermal reduction at
450
°
C
thins out the two-dimensional few-atom thick films and dramatically reduces electrical resistances down to
40
k
Ω
. Conductivities between 15 and 36 S/cm are obtained. The introduced method permits the nonintrusive, parallel, large-scale assembly of soluble two-dimensional nanostructures and sheets.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3077197</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-02, Vol.94 (5), p.053110-053110-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-7164f1074483126b9189faa69e6e29a48bba86a3371d7bad8c4af60ffc41af233</citedby><cites>FETCH-LOGICAL-c350t-7164f1074483126b9189faa69e6e29a48bba86a3371d7bad8c4af60ffc41af233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3077197$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,782,786,796,1561,4516,27933,27934,76394,76400</link.rule.ids></links><search><creatorcontrib>Burg, Brian R.</creatorcontrib><creatorcontrib>Lütolf, Fabian</creatorcontrib><creatorcontrib>Schneider, Julian</creatorcontrib><creatorcontrib>Schirmer, Niklas C.</creatorcontrib><creatorcontrib>Schwamb, Timo</creatorcontrib><creatorcontrib>Poulikakos, Dimos</creatorcontrib><title>High-yield dielectrophoretic assembly of two-dimensional graphene nanostructures</title><title>Applied physics letters</title><description>Graphene handling is still dominated by serial mechanical exfoliation, which may well facilitate measurements in a laboratory environment but does not allow reliable larger-scale integration. Herein we demonstrate the controlled, high-yield
(
>
90
%
)
, site-selective deposition of ultrathin few-layer (three to ten) graphene oxide by dielectrophoresis between prefabricated electrodes. Individual layers are found near the edges. Initially insulating, thermal reduction at
450
°
C
thins out the two-dimensional few-atom thick films and dramatically reduces electrical resistances down to
40
k
Ω
. Conductivities between 15 and 36 S/cm are obtained. The introduced method permits the nonintrusive, parallel, large-scale assembly of soluble two-dimensional nanostructures and sheets.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAUx4MoWKcHv0GvHjLzljZtL4IMdcJAD3oOr2myRtpmJBmyb2_mhjcv770__Hn8-BFyC2wOTPB7mHNWVdBUZySDdFEOUJ-TjDHGqWhKuCRXIXylWC44z8j7ym56urd66PIuTa2id9veeR2tyjEEPbbDPncmj9-OdnbUU7BuwiHfeNz2etL5hJML0e9U3HkdrsmFwSHom9Oekc_np4_liq7fXl6Xj2uqeMkirUAUJgEWRc1hIdoG6sYgikYLvWiwqNsWa4GcV9BVLXa1KtAIZowqAE1Cn5G741_lXQheG7n1dkS_l8DkQYUEeVKRug_HblA2Ykz8_5cPPuSvD_nng_8AFOJnzg</recordid><startdate>20090202</startdate><enddate>20090202</enddate><creator>Burg, Brian R.</creator><creator>Lütolf, Fabian</creator><creator>Schneider, Julian</creator><creator>Schirmer, Niklas C.</creator><creator>Schwamb, Timo</creator><creator>Poulikakos, Dimos</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090202</creationdate><title>High-yield dielectrophoretic assembly of two-dimensional graphene nanostructures</title><author>Burg, Brian R. ; Lütolf, Fabian ; Schneider, Julian ; Schirmer, Niklas C. ; Schwamb, Timo ; Poulikakos, Dimos</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-7164f1074483126b9189faa69e6e29a48bba86a3371d7bad8c4af60ffc41af233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Burg, Brian R.</creatorcontrib><creatorcontrib>Lütolf, Fabian</creatorcontrib><creatorcontrib>Schneider, Julian</creatorcontrib><creatorcontrib>Schirmer, Niklas C.</creatorcontrib><creatorcontrib>Schwamb, Timo</creatorcontrib><creatorcontrib>Poulikakos, Dimos</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Burg, Brian R.</au><au>Lütolf, Fabian</au><au>Schneider, Julian</au><au>Schirmer, Niklas C.</au><au>Schwamb, Timo</au><au>Poulikakos, Dimos</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-yield dielectrophoretic assembly of two-dimensional graphene nanostructures</atitle><jtitle>Applied physics letters</jtitle><date>2009-02-02</date><risdate>2009</risdate><volume>94</volume><issue>5</issue><spage>053110</spage><epage>053110-3</epage><pages>053110-053110-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Graphene handling is still dominated by serial mechanical exfoliation, which may well facilitate measurements in a laboratory environment but does not allow reliable larger-scale integration. Herein we demonstrate the controlled, high-yield
(
>
90
%
)
, site-selective deposition of ultrathin few-layer (three to ten) graphene oxide by dielectrophoresis between prefabricated electrodes. Individual layers are found near the edges. Initially insulating, thermal reduction at
450
°
C
thins out the two-dimensional few-atom thick films and dramatically reduces electrical resistances down to
40
k
Ω
. Conductivities between 15 and 36 S/cm are obtained. The introduced method permits the nonintrusive, parallel, large-scale assembly of soluble two-dimensional nanostructures and sheets.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3077197</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2009-02, Vol.94 (5), p.053110-053110-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3077197 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | High-yield dielectrophoretic assembly of two-dimensional graphene nanostructures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-11-30T06%3A44%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-yield%20dielectrophoretic%20assembly%20of%20two-dimensional%20graphene%20nanostructures&rft.jtitle=Applied%20physics%20letters&rft.au=Burg,%20Brian%20R.&rft.date=2009-02-02&rft.volume=94&rft.issue=5&rft.spage=053110&rft.epage=053110-3&rft.pages=053110-053110-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3077197&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |