Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors

We investigated the effect of the high-k TiOx (k∼40) gate dielectric on the mobility (μFE) of indium-gallium-zinc oxide (IGZO) transistors. As the thickness of the TiOx layer at the interface of the IGZO channel and SiNx gate dielectric layer increased from 2 to 8 nm, the μFE value was monotonously...

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Veröffentlicht in:	Applied physics letters 2009-01, Vol.94 (4)
Hauptverfasser:	Park, Jin-Seong, Jeong, Jae Kyeong, Mo, Yeon-Gon, Kim, Sangwook
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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