Ultrafast all-optical modulation in GaAs photonic crystal cavities
We demonstrate all-optical modulation based on ultrafast optical carrier injection in a GaAs photonic crystal cavity using a degenerate pump-probe technique. The observations agree well with a coupled-mode model incorporating all relevant nonlinearities. The low switching energy ( ∼ 120 fJ ) , sma...
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Veröffentlicht in: | Applied physics letters 2009-01, Vol.94 (2), p.021111-021111-3 |
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creator | Husko, Chad De Rossi, Alfredo Combrié, Sylvain Tran, Quynh Vy Raineri, Fabrice Wong, Chee Wei |
description | We demonstrate all-optical modulation based on ultrafast optical carrier injection in a GaAs photonic crystal cavity using a degenerate pump-probe technique. The observations agree well with a coupled-mode model incorporating all relevant nonlinearities. The low switching energy
(
∼
120
fJ
)
, small energy absorption
(
∼
10
fJ
)
, fast on-off response
(
∼
15
ps
)
, limited only by carrier lifetime, and a minimum 10 dB modulation depth suggest practical all-optical switching applications at high repetition rates. |
doi_str_mv | 10.1063/1.3068755 |
format | Article |
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(
∼
120
fJ
)
, small energy absorption
(
∼
10
fJ
)
, fast on-off response
(
∼
15
ps
)
, limited only by carrier lifetime, and a minimum 10 dB modulation depth suggest practical all-optical switching applications at high repetition rates.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3068755</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-01, Vol.94 (2), p.021111-021111-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-ae54248b05a7aac12cc8c184646f9e5f0f025603cd0fdf50b76a24e13767761e3</citedby><cites>FETCH-LOGICAL-c350t-ae54248b05a7aac12cc8c184646f9e5f0f025603cd0fdf50b76a24e13767761e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3068755$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Husko, Chad</creatorcontrib><creatorcontrib>De Rossi, Alfredo</creatorcontrib><creatorcontrib>Combrié, Sylvain</creatorcontrib><creatorcontrib>Tran, Quynh Vy</creatorcontrib><creatorcontrib>Raineri, Fabrice</creatorcontrib><creatorcontrib>Wong, Chee Wei</creatorcontrib><title>Ultrafast all-optical modulation in GaAs photonic crystal cavities</title><title>Applied physics letters</title><description>We demonstrate all-optical modulation based on ultrafast optical carrier injection in a GaAs photonic crystal cavity using a degenerate pump-probe technique. The observations agree well with a coupled-mode model incorporating all relevant nonlinearities. The low switching energy
(
∼
120
fJ
)
, small energy absorption
(
∼
10
fJ
)
, fast on-off response
(
∼
15
ps
)
, limited only by carrier lifetime, and a minimum 10 dB modulation depth suggest practical all-optical switching applications at high repetition rates.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kMFLwzAUh4MoWKcH_4NePWS-1zRJdxHmcFMYeHHn8JYmGOna0kRh_73VDm-eHg8-fvB9jN0izBGUuMe5AFVpKc9YhqA1F4jVOcsAQHC1kHjJrmL8GF9ZCJGxx12TBvIUU05Nw7s-BUtNfujqz4ZS6No8tPmGljHv37vUtcHmdjjGNDKWvkIKLl6zC09NdDenO2O79dPb6plvXzcvq-WWWyEhcXKyLMpqD5I0kcXC2spiVapS-YWTHjwUUoGwNfjaS9hrRUXpUGiltUInZuxu2rVDF-PgvOmHcKDhaBDMj7xBc5If2YeJjTakX4__4b8CZixgpgLiG8CEYW0</recordid><startdate>20090112</startdate><enddate>20090112</enddate><creator>Husko, Chad</creator><creator>De Rossi, Alfredo</creator><creator>Combrié, Sylvain</creator><creator>Tran, Quynh Vy</creator><creator>Raineri, Fabrice</creator><creator>Wong, Chee Wei</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090112</creationdate><title>Ultrafast all-optical modulation in GaAs photonic crystal cavities</title><author>Husko, Chad ; De Rossi, Alfredo ; Combrié, Sylvain ; Tran, Quynh Vy ; Raineri, Fabrice ; Wong, Chee Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-ae54248b05a7aac12cc8c184646f9e5f0f025603cd0fdf50b76a24e13767761e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Husko, Chad</creatorcontrib><creatorcontrib>De Rossi, Alfredo</creatorcontrib><creatorcontrib>Combrié, Sylvain</creatorcontrib><creatorcontrib>Tran, Quynh Vy</creatorcontrib><creatorcontrib>Raineri, Fabrice</creatorcontrib><creatorcontrib>Wong, Chee Wei</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Husko, Chad</au><au>De Rossi, Alfredo</au><au>Combrié, Sylvain</au><au>Tran, Quynh Vy</au><au>Raineri, Fabrice</au><au>Wong, Chee Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultrafast all-optical modulation in GaAs photonic crystal cavities</atitle><jtitle>Applied physics letters</jtitle><date>2009-01-12</date><risdate>2009</risdate><volume>94</volume><issue>2</issue><spage>021111</spage><epage>021111-3</epage><pages>021111-021111-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We demonstrate all-optical modulation based on ultrafast optical carrier injection in a GaAs photonic crystal cavity using a degenerate pump-probe technique. The observations agree well with a coupled-mode model incorporating all relevant nonlinearities. The low switching energy
(
∼
120
fJ
)
, small energy absorption
(
∼
10
fJ
)
, fast on-off response
(
∼
15
ps
)
, limited only by carrier lifetime, and a minimum 10 dB modulation depth suggest practical all-optical switching applications at high repetition rates.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3068755</doi></addata></record> |
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title | Ultrafast all-optical modulation in GaAs photonic crystal cavities |
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