Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

Functioning InP/InGaAs/InP p-i-n photodiodes were integrated onto a Si substrate using hydrogen-induced layer transfer process (ion cut) combined with selective chemical etching. This device transfer process minimizes the hydrogen implantation-induced damage and simultaneously improves the transferr...

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Veröffentlicht in:	Applied physics letters 2009-01, Vol.94 (1)
Hauptverfasser:	Chen, Peng, Chen, Winnie V., Yu, Paul K. L., Tang, Chak Wah, Lau, Kei May, Mawst, Luke, Paulson, Charles, Kuech, T. F., Lau, S. S.
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container_title	Applied physics letters
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creator	Chen, Peng Chen, Winnie V. Yu, Paul K. L. Tang, Chak Wah Lau, Kei May Mawst, Luke Paulson, Charles Kuech, T. F. Lau, S. S.
description	Functioning InP/InGaAs/InP p-i-n photodiodes were integrated onto a Si substrate using hydrogen-induced layer transfer process (ion cut) combined with selective chemical etching. This device transfer process minimizes the hydrogen implantation-induced damage and simultaneously improves the transferred surface flatness for device processing. After transfer, the dark current under the reverse bias increased by ∼1.5 times over that of the as-grown photodiodes at −1.5 V, while the photoinduced current was comparable to that of the as-grown sample. These results were discussed in terms of interactions between minority carriers and the remaining implantation-induced damage.
doi_str_mv	10.1063/1.3062848
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title	Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon
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