Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates
Double heterostructures (DHs) consisting of BeZnSeTe active and MgSe/BeZnTe superlattice cladding layers were fabricated on InP substrates by molecular beam epitaxy. By photoexciting the DHs, green lasing emissions at 548 nm were obtained at room temperature. The threshold excitation power density w...
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| Veröffentlicht in: | Applied physics letters 2009-01, Vol.94 (2), p.021104-021104-3 |
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| container_end_page | 021104-3 |
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| container_issue | 2 |
| container_start_page | 021104 |
| container_title | Applied physics letters |
| container_volume | 94 |
| creator | Nomura, Ichirou Kishino, Katsumi Ebisawa, Tomoya Sawafuji, Yutaka Ujihara, Rieko Tasai, Kunihiko Nakamura, Hitoshi Asatsuma, Tsunenori Nakajima, Hiroshi |
| description | Double heterostructures (DHs) consisting of BeZnSeTe active and MgSe/BeZnTe superlattice cladding layers were fabricated on InP substrates by molecular beam epitaxy. By photoexciting the DHs, green lasing emissions at 548 nm were obtained at room temperature. The threshold excitation power density was
70
kW
/
cm
2
, from which we estimated the threshold carrier density and threshold current density assuming a green laser diode (LD) with a BeZnSeTe active layer to be
(
1.4
-
4.6
)
×
10
18
cm
−
3
and
0.22
-
0.73
kA
/
cm
2
, respectively. The experiment proved the applicability of BeZnSeTe as an active layer of green LDs. |
| doi_str_mv | 10.1063/1.3058761 |
| format | Article |
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70
kW
/
cm
2
, from which we estimated the threshold carrier density and threshold current density assuming a green laser diode (LD) with a BeZnSeTe active layer to be
(
1.4
-
4.6
)
×
10
18
cm
−
3
and
0.22
-
0.73
kA
/
cm
2
, respectively. The experiment proved the applicability of BeZnSeTe as an active layer of green LDs.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3058761</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-01, Vol.94 (2), p.021104-021104-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c394t-e389901c9d646fac748878936b4269699ee0b5a989ca2ceffe17d5dfa20c9543</citedby><cites>FETCH-LOGICAL-c394t-e389901c9d646fac748878936b4269699ee0b5a989ca2ceffe17d5dfa20c9543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3058761$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4497,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Nomura, Ichirou</creatorcontrib><creatorcontrib>Kishino, Katsumi</creatorcontrib><creatorcontrib>Ebisawa, Tomoya</creatorcontrib><creatorcontrib>Sawafuji, Yutaka</creatorcontrib><creatorcontrib>Ujihara, Rieko</creatorcontrib><creatorcontrib>Tasai, Kunihiko</creatorcontrib><creatorcontrib>Nakamura, Hitoshi</creatorcontrib><creatorcontrib>Asatsuma, Tsunenori</creatorcontrib><creatorcontrib>Nakajima, Hiroshi</creatorcontrib><title>Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates</title><title>Applied physics letters</title><description>Double heterostructures (DHs) consisting of BeZnSeTe active and MgSe/BeZnTe superlattice cladding layers were fabricated on InP substrates by molecular beam epitaxy. By photoexciting the DHs, green lasing emissions at 548 nm were obtained at room temperature. The threshold excitation power density was
70
kW
/
cm
2
, from which we estimated the threshold carrier density and threshold current density assuming a green laser diode (LD) with a BeZnSeTe active layer to be
(
1.4
-
4.6
)
×
10
18
cm
−
3
and
0.22
-
0.73
kA
/
cm
2
, respectively. The experiment proved the applicability of BeZnSeTe as an active layer of green LDs.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAUx4MoWKcHv0GuHjqTpk2Ti6DD6WDgwJ68hDR93SpdUpIU8dvbuR28eHo83u_9-fND6JaSOSWc3dM5I4UoOT1DCSVlmTJKxTlKCCEs5bKgl-gqhM9pLTLGElRtdi66YdwP0OCtB7C416GzW-wsfoIP-w4V4MaNdQ94BxG8C9GPJo4ewvTgvuyBXNkNDmM9nXSEcI0uWt0HuDnNGaqWz9XiNV2_vawWj-vUMJnHFJiQklAjG57zVpsyF6IUkvE6z7jkUgKQutBSSKMzA20LtGyKptUZMbLI2QzdHWPNVCp4aNXgu73234oSdbChqDrZmNiHIxtMF3XsnP0f_qNE_SpRvWY_5nNoXg</recordid><startdate>20090112</startdate><enddate>20090112</enddate><creator>Nomura, Ichirou</creator><creator>Kishino, Katsumi</creator><creator>Ebisawa, Tomoya</creator><creator>Sawafuji, Yutaka</creator><creator>Ujihara, Rieko</creator><creator>Tasai, Kunihiko</creator><creator>Nakamura, Hitoshi</creator><creator>Asatsuma, Tsunenori</creator><creator>Nakajima, Hiroshi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090112</creationdate><title>Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates</title><author>Nomura, Ichirou ; Kishino, Katsumi ; Ebisawa, Tomoya ; Sawafuji, Yutaka ; Ujihara, Rieko ; Tasai, Kunihiko ; Nakamura, Hitoshi ; Asatsuma, Tsunenori ; Nakajima, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c394t-e389901c9d646fac748878936b4269699ee0b5a989ca2ceffe17d5dfa20c9543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nomura, Ichirou</creatorcontrib><creatorcontrib>Kishino, Katsumi</creatorcontrib><creatorcontrib>Ebisawa, Tomoya</creatorcontrib><creatorcontrib>Sawafuji, Yutaka</creatorcontrib><creatorcontrib>Ujihara, Rieko</creatorcontrib><creatorcontrib>Tasai, Kunihiko</creatorcontrib><creatorcontrib>Nakamura, Hitoshi</creatorcontrib><creatorcontrib>Asatsuma, Tsunenori</creatorcontrib><creatorcontrib>Nakajima, Hiroshi</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nomura, Ichirou</au><au>Kishino, Katsumi</au><au>Ebisawa, Tomoya</au><au>Sawafuji, Yutaka</au><au>Ujihara, Rieko</au><au>Tasai, Kunihiko</au><au>Nakamura, Hitoshi</au><au>Asatsuma, Tsunenori</au><au>Nakajima, Hiroshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates</atitle><jtitle>Applied physics letters</jtitle><date>2009-01-12</date><risdate>2009</risdate><volume>94</volume><issue>2</issue><spage>021104</spage><epage>021104-3</epage><pages>021104-021104-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Double heterostructures (DHs) consisting of BeZnSeTe active and MgSe/BeZnTe superlattice cladding layers were fabricated on InP substrates by molecular beam epitaxy. By photoexciting the DHs, green lasing emissions at 548 nm were obtained at room temperature. The threshold excitation power density was
70
kW
/
cm
2
, from which we estimated the threshold carrier density and threshold current density assuming a green laser diode (LD) with a BeZnSeTe active layer to be
(
1.4
-
4.6
)
×
10
18
cm
−
3
and
0.22
-
0.73
kA
/
cm
2
, respectively. The experiment proved the applicability of BeZnSeTe as an active layer of green LDs.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3058761</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2009-01, Vol.94 (2), p.021104-021104-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3058761 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates |
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