Hydrogen sensing properties of a metamorphic high electron mobility transistor

Hydrogen sensing properties of a metamorphic high electron mobility transistor

Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal l...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2009-01, Vol.94 (1), p.012102-012102-3
Hauptverfasser: Tsai, Tsung-Han, Chen, Huey-Ing, Chang, Chung-Fu, Chiu, Po-Shun, Liu, Yi-Chun, Chen, Li-Yang, Chen, Tzu-Pin, Liu, Wen-Chau
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 012102-3
container_issue 1
container_start_page 012102
container_title Applied physics letters
container_volume 94
creator Tsai, Tsung-Han
Chen, Huey-Ing
Chang, Chung-Fu
Chiu, Po-Shun
Liu, Yi-Chun
Chen, Li-Yang
Chen, Tzu-Pin
Liu, Wen-Chau
description Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.
doi_str_mv 10.1063/1.3052698
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3052698</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-c4189a6318ebbeb4385b759bac9c91256c5843853ad8e0c512121fa35312565d3</originalsourceid><addsrcrecordid>eNp1kMFOhDAQhhujibh68A169cDaYSiUi4nZqGuy0YueSSkFaoCSthfeXsji0cxhMv98M4ePkHtge2AZPsIeGU-yQlyQCFiexwggLknEGMM4Kzhckxvvf5aRJ4gR-TjOtbOtHqnXozdjSydnJ-2C0Z7ahko66CAH66bOKNqZtqO61yo4O9LBVqY3YabByeXWB-tuyVUje6_vtr4j368vX4djfPp8ez88n2KViDTEKgVRyAxB6KrSVYqCVzkvKqkKVUDCM8XFGqKshWaKQ7JUI5HjuuQ17sjD-a9y1nunm3JyZpBuLoGVq4gSyk3Ewj6dWa9MkMHY8X_4z0a52VhIi7-Z4GYp</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Hydrogen sensing properties of a metamorphic high electron mobility transistor</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Tsai, Tsung-Han ; Chen, Huey-Ing ; Chang, Chung-Fu ; Chiu, Po-Shun ; Liu, Yi-Chun ; Chen, Li-Yang ; Chen, Tzu-Pin ; Liu, Wen-Chau</creator><creatorcontrib>Tsai, Tsung-Han ; Chen, Huey-Ing ; Chang, Chung-Fu ; Chiu, Po-Shun ; Liu, Yi-Chun ; Chen, Li-Yang ; Chen, Tzu-Pin ; Liu, Wen-Chau</creatorcontrib><description>Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3052698</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-01, Vol.94 (1), p.012102-012102-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-c4189a6318ebbeb4385b759bac9c91256c5843853ad8e0c512121fa35312565d3</citedby><cites>FETCH-LOGICAL-c284t-c4189a6318ebbeb4385b759bac9c91256c5843853ad8e0c512121fa35312565d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3052698$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Tsai, Tsung-Han</creatorcontrib><creatorcontrib>Chen, Huey-Ing</creatorcontrib><creatorcontrib>Chang, Chung-Fu</creatorcontrib><creatorcontrib>Chiu, Po-Shun</creatorcontrib><creatorcontrib>Liu, Yi-Chun</creatorcontrib><creatorcontrib>Chen, Li-Yang</creatorcontrib><creatorcontrib>Chen, Tzu-Pin</creatorcontrib><creatorcontrib>Liu, Wen-Chau</creatorcontrib><title>Hydrogen sensing properties of a metamorphic high electron mobility transistor</title><title>Applied physics letters</title><description>Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kMFOhDAQhhujibh68A169cDaYSiUi4nZqGuy0YueSSkFaoCSthfeXsji0cxhMv98M4ePkHtge2AZPsIeGU-yQlyQCFiexwggLknEGMM4Kzhckxvvf5aRJ4gR-TjOtbOtHqnXozdjSydnJ-2C0Z7ahko66CAH66bOKNqZtqO61yo4O9LBVqY3YabByeXWB-tuyVUje6_vtr4j368vX4djfPp8ez88n2KViDTEKgVRyAxB6KrSVYqCVzkvKqkKVUDCM8XFGqKshWaKQ7JUI5HjuuQ17sjD-a9y1nunm3JyZpBuLoGVq4gSyk3Ewj6dWa9MkMHY8X_4z0a52VhIi7-Z4GYp</recordid><startdate>20090105</startdate><enddate>20090105</enddate><creator>Tsai, Tsung-Han</creator><creator>Chen, Huey-Ing</creator><creator>Chang, Chung-Fu</creator><creator>Chiu, Po-Shun</creator><creator>Liu, Yi-Chun</creator><creator>Chen, Li-Yang</creator><creator>Chen, Tzu-Pin</creator><creator>Liu, Wen-Chau</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090105</creationdate><title>Hydrogen sensing properties of a metamorphic high electron mobility transistor</title><author>Tsai, Tsung-Han ; Chen, Huey-Ing ; Chang, Chung-Fu ; Chiu, Po-Shun ; Liu, Yi-Chun ; Chen, Li-Yang ; Chen, Tzu-Pin ; Liu, Wen-Chau</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-c4189a6318ebbeb4385b759bac9c91256c5843853ad8e0c512121fa35312565d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsai, Tsung-Han</creatorcontrib><creatorcontrib>Chen, Huey-Ing</creatorcontrib><creatorcontrib>Chang, Chung-Fu</creatorcontrib><creatorcontrib>Chiu, Po-Shun</creatorcontrib><creatorcontrib>Liu, Yi-Chun</creatorcontrib><creatorcontrib>Chen, Li-Yang</creatorcontrib><creatorcontrib>Chen, Tzu-Pin</creatorcontrib><creatorcontrib>Liu, Wen-Chau</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsai, Tsung-Han</au><au>Chen, Huey-Ing</au><au>Chang, Chung-Fu</au><au>Chiu, Po-Shun</au><au>Liu, Yi-Chun</au><au>Chen, Li-Yang</au><au>Chen, Tzu-Pin</au><au>Liu, Wen-Chau</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hydrogen sensing properties of a metamorphic high electron mobility transistor</atitle><jtitle>Applied physics letters</jtitle><date>2009-01-05</date><risdate>2009</risdate><volume>94</volume><issue>1</issue><spage>012102</spage><epage>012102-3</epage><pages>012102-012102-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3052698</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2009-01, Vol.94 (1), p.012102-012102-3
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3052698
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Hydrogen sensing properties of a metamorphic high electron mobility transistor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T19%3A50%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hydrogen%20sensing%20properties%20of%20a%20metamorphic%20high%20electron%20mobility%20transistor&rft.jtitle=Applied%20physics%20letters&rft.au=Tsai,%20Tsung-Han&rft.date=2009-01-05&rft.volume=94&rft.issue=1&rft.spage=012102&rft.epage=012102-3&rft.pages=012102-012102-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3052698&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true