Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and th...

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Veröffentlicht in:Applied physics letters 2008-12, Vol.93 (22), p.222103-222103-3
Hauptverfasser: Miyamoto, Satoru, Nishiguchi, Katsuhiko, Ono, Yukinori, Itoh, Kohei M., Fujiwara, Akira
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container_end_page 222103-3
container_issue 22
container_start_page 222103
container_title Applied physics letters
container_volume 93
creator Miyamoto, Satoru
Nishiguchi, Katsuhiko
Ono, Yukinori
Itoh, Kohei M.
Fujiwara, Akira
description Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.
doi_str_mv 10.1063/1.3028649
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title Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
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