ZnO-based low voltage inverter with low-k/high-k double polymer dielectric layer

ZnO-based low voltage inverter with low-k/high-k double polymer dielectric layer

We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n-channel ZnO thin-film transistors (TFTs) with a low-k poly-4-vinylphenol and high-k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illumina...

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Veröffentlicht in:Applied physics letters 2008-11, Vol.93 (19)
Hauptverfasser: Lee, Kimoon, Kim, Ki-tae, Lee, Kwang H., Lee, Gyubaek, Oh, Min Suk, Choi, Jeong-M., Im, Seongil, Jang, Sungjin, Kim, Eugene
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container_issue 19
container_start_page
container_title Applied physics letters
container_volume 93
creator Lee, Kimoon
Kim, Ki-tae
Lee, Kwang H.
Lee, Gyubaek
Oh, Min Suk
Choi, Jeong-M.
Im, Seongil
Jang, Sungjin
Kim, Eugene
description We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n-channel ZnO thin-film transistors (TFTs) with a low-k poly-4-vinylphenol and high-k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm2/V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5–7 V), demonstrating a dynamic response of ∼20 ms.
doi_str_mv 10.1063/1.3028093
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title ZnO-based low voltage inverter with low-k/high-k double polymer dielectric layer
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