High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations includ...

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Veröffentlicht in:	Journal of applied physics 2008-11, Vol.104 (9), p.094512-094512-7
Hauptverfasser:	Chen, Zuhui, Jie, Bin B, Sah, Chih-Tang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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