Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates
Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60° dislocations....
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2008-08, Vol.93 (7) |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 7 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 93 |
creator | Parsons, J. Morris, R. J. H. Leadley, D. R. Parker, E. H. C. Fulgoni, D. J. F. Nash, L. J. |
description | Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60° dislocations. Relaxation is limited because many of these dislocations dissociate into extended stacking faults that impede the dislocation glide. For thicker layers, nucleated microtwins were observed, which significantly increased relaxation to 14%. All these tensile strained layers are found to be much more stable than layers with comparable compressive strain. |
doi_str_mv | 10.1063/1.2975188 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2975188</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2975188</sourcerecordid><originalsourceid>FETCH-LOGICAL-c194t-7a70e704b9c5e8894c13e029a7b5090d8be2cf7228f981f029f702a5f6504eee3</originalsourceid><addsrcrecordid>eNotT01LxDAUDKJgXT34D3L10Ppe0jTJSWTRVVgQ_DiXNPsCkdpK0hX997bsXmaYDwaGsWuECqGRt1gJqxUac8IKBK1LiWhOWQEAsmyswnN2kfPnLJWQsmB3r9S7XzfFceBj4HlKLg604zn20S_ewN8iVGpDM_CfmKa963ned0tzonzJzoLrM10decU-Hh_e10_l9mXzvL7flh5tPZXaaSANdWe9ImNs7VESCOt0p8DCznQkfNBCmGANhjkJGoRToVFQE5FcsZvDrk9jzolC-53il0t_LUK7PG-xPT6X__lMSXI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Parsons, J. ; Morris, R. J. H. ; Leadley, D. R. ; Parker, E. H. C. ; Fulgoni, D. J. F. ; Nash, L. J.</creator><creatorcontrib>Parsons, J. ; Morris, R. J. H. ; Leadley, D. R. ; Parker, E. H. C. ; Fulgoni, D. J. F. ; Nash, L. J.</creatorcontrib><description>Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60° dislocations. Relaxation is limited because many of these dislocations dissociate into extended stacking faults that impede the dislocation glide. For thicker layers, nucleated microtwins were observed, which significantly increased relaxation to 14%. All these tensile strained layers are found to be much more stable than layers with comparable compressive strain.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2975188</identifier><language>eng</language><ispartof>Applied physics letters, 2008-08, Vol.93 (7)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c194t-7a70e704b9c5e8894c13e029a7b5090d8be2cf7228f981f029f702a5f6504eee3</citedby><cites>FETCH-LOGICAL-c194t-7a70e704b9c5e8894c13e029a7b5090d8be2cf7228f981f029f702a5f6504eee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Parsons, J.</creatorcontrib><creatorcontrib>Morris, R. J. H.</creatorcontrib><creatorcontrib>Leadley, D. R.</creatorcontrib><creatorcontrib>Parker, E. H. C.</creatorcontrib><creatorcontrib>Fulgoni, D. J. F.</creatorcontrib><creatorcontrib>Nash, L. J.</creatorcontrib><title>Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates</title><title>Applied physics letters</title><description>Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60° dislocations. Relaxation is limited because many of these dislocations dissociate into extended stacking faults that impede the dislocation glide. For thicker layers, nucleated microtwins were observed, which significantly increased relaxation to 14%. All these tensile strained layers are found to be much more stable than layers with comparable compressive strain.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotT01LxDAUDKJgXT34D3L10Ppe0jTJSWTRVVgQ_DiXNPsCkdpK0hX997bsXmaYDwaGsWuECqGRt1gJqxUac8IKBK1LiWhOWQEAsmyswnN2kfPnLJWQsmB3r9S7XzfFceBj4HlKLg604zn20S_ewN8iVGpDM_CfmKa963ned0tzonzJzoLrM10decU-Hh_e10_l9mXzvL7flh5tPZXaaSANdWe9ImNs7VESCOt0p8DCznQkfNBCmGANhjkJGoRToVFQE5FcsZvDrk9jzolC-53il0t_LUK7PG-xPT6X__lMSXI</recordid><startdate>20080818</startdate><enddate>20080818</enddate><creator>Parsons, J.</creator><creator>Morris, R. J. H.</creator><creator>Leadley, D. R.</creator><creator>Parker, E. H. C.</creator><creator>Fulgoni, D. J. F.</creator><creator>Nash, L. J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080818</creationdate><title>Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates</title><author>Parsons, J. ; Morris, R. J. H. ; Leadley, D. R. ; Parker, E. H. C. ; Fulgoni, D. J. F. ; Nash, L. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c194t-7a70e704b9c5e8894c13e029a7b5090d8be2cf7228f981f029f702a5f6504eee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Parsons, J.</creatorcontrib><creatorcontrib>Morris, R. J. H.</creatorcontrib><creatorcontrib>Leadley, D. R.</creatorcontrib><creatorcontrib>Parker, E. H. C.</creatorcontrib><creatorcontrib>Fulgoni, D. J. F.</creatorcontrib><creatorcontrib>Nash, L. J.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Parsons, J.</au><au>Morris, R. J. H.</au><au>Leadley, D. R.</au><au>Parker, E. H. C.</au><au>Fulgoni, D. J. F.</au><au>Nash, L. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates</atitle><jtitle>Applied physics letters</jtitle><date>2008-08-18</date><risdate>2008</risdate><volume>93</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60° dislocations. Relaxation is limited because many of these dislocations dissociate into extended stacking faults that impede the dislocation glide. For thicker layers, nucleated microtwins were observed, which significantly increased relaxation to 14%. All these tensile strained layers are found to be much more stable than layers with comparable compressive strain.</abstract><doi>10.1063/1.2975188</doi><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2008-08, Vol.93 (7) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_crossref_primary_10_1063_1_2975188 |
source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
title | Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T19%3A56%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Relaxation%20of%20strained%20silicon%20on%20Si0.5Ge0.5%20virtual%20substrates&rft.jtitle=Applied%20physics%20letters&rft.au=Parsons,%20J.&rft.date=2008-08-18&rft.volume=93&rft.issue=7&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2975188&rft_dat=%3Ccrossref%3E10_1063_1_2975188%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |