The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility
In this paper, we present an experimental and theoretical study on the reduction in electron mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) with a TiN/HfO2/SiO2 gate stack. Through low temperature mobility measurements down to 100 K, it is shown that the scattering mechanis...
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| Veröffentlicht in: | Journal of applied physics 2008-10, Vol.104 (7) |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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