Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

We investigated the resistive switching characteristics of two types of Pt∕NiO∕Pt structures with epitaxial and polycrystalline NiO layers. Both of these Pt∕NiO∕Pt structures exhibited unipolar resistive switching. Pt/epitaxial-NiO∕Pt showed unstable switching or no resistance state change after sev...

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Veröffentlicht in:Applied physics letters 2008-07, Vol.93 (4)
Hauptverfasser: Park, Chanwoo, Jeon, Sang Ho, Chae, Seung Chul, Han, Seungwu, Park, Bae Ho, Seo, Sunae, Kim, Dong-Wook
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container_title Applied physics letters
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creator Park, Chanwoo
Jeon, Sang Ho
Chae, Seung Chul
Han, Seungwu
Park, Bae Ho
Seo, Sunae
Kim, Dong-Wook
description We investigated the resistive switching characteristics of two types of Pt∕NiO∕Pt structures with epitaxial and polycrystalline NiO layers. Both of these Pt∕NiO∕Pt structures exhibited unipolar resistive switching. Pt/epitaxial-NiO∕Pt showed unstable switching or no resistance state change after several repeated runs. Pt/polycrystalline-NiO∕Pt showed very reproducible switching. The experimental data indicated that microstructural defects (e.g., grain boundaries) played crucial roles in the reliability of the unipolar resistive switching behavior. This was further supported by first-principles calculations.
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title Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures
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