Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor deposition. The use of quaternary alloys enables an independent control over interface polarization charges and bandgap and has been sugge...

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Veröffentlicht in:Applied physics letters 2008-07, Vol.93 (4)
Hauptverfasser: Schubert, Martin F., Xu, Jiuru, Kim, Jong Kyu, Schubert, E. Fred, Kim, Min Ho, Yoon, Sukho, Lee, Soo Min, Sone, Cheolsoo, Sakong, Tan, Park, Yongjo
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container_issue 4
container_start_page
container_title Applied physics letters
container_volume 93
creator Schubert, Martin F.
Xu, Jiuru
Kim, Jong Kyu
Schubert, E. Fred
Kim, Min Ho
Yoon, Sukho
Lee, Soo Min
Sone, Cheolsoo
Sakong, Tan
Park, Yongjo
description Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor deposition. The use of quaternary alloys enables an independent control over interface polarization charges and bandgap and has been suggested as a method to reduce electron leakage from the active region, a carrier loss mechanism that can reduce efficiency at high injection currents—an effect known as the efficiency droop. The GaInN∕AlGaInN LEDs show reduced forward voltage, reduced efficiency droop, and improved light-output power at large currents compared to conventional GaInN∕GaN LEDs.
doi_str_mv 10.1063/1.2963029
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title Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
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