Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities

Fullerene C60 thin-film transistors (TFTs) with bottom-contact structure have been fabricated. The parasitic resistance was extracted using gated-transmission line method. The drain/source electrodes consisted of a single Au layer with no adhesion layer; the channel lengths ranged from 5 to 40 μm. T...

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Veröffentlicht in:Applied physics letters 2008-07, Vol.93 (3)
Hauptverfasser: Kitamura, Masatoshi, Aomori, Shigeru, Arakawa, Yasuhiko
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Aomori, Shigeru
Arakawa, Yasuhiko
description Fullerene C60 thin-film transistors (TFTs) with bottom-contact structure have been fabricated. The parasitic resistance was extracted using gated-transmission line method. The drain/source electrodes consisted of a single Au layer with no adhesion layer; the channel lengths ranged from 5 to 40 μm. The field-effect mobilities in the saturation regime slightly depended on the channel length, ranging from 2.45 to 3.23 cm2/V s. The mobility of 3.23 cm2/V s was obtained from the TFT with a channel length of 5 μm and is the highest in organic TFTs with bottom-contact structure. The high mobility is due to the low parasitic resistance.
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title Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities
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