Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes
Carrier distributions governed by hole transport in InGaN∕GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in...
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| Veröffentlicht in: | Applied physics letters 2008-07, Vol.93 (2) |
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| container_title | Applied physics letters |
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| creator | Liu, J. P. Ryou, J.-H. Dupuis, R. D. Han, J. Shen, G. D. Wang, H. B. |
| description | Carrier distributions governed by hole transport in InGaN∕GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in LEDs with conventional MQW active regions at a current of 20mA. A decrease in the thickness or the height of the quantum-well potential barrier enhanced hole injection into the MQWs located near the n-GaN layer. Reducing the thickness of a GaN quantum-well barrier between the blue QW and green QW did not degrade the electroluminescence (EL) intensity of the LED. In contrast, reducing the potential height of the barrier with material of possibly compromised quality resulted in a degradation of the EL intensity of the LED. |
| doi_str_mv | 10.1063/1.2957667 |
| format | Article |
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P. ; Ryou, J.-H. ; Dupuis, R. D. ; Han, J. ; Shen, G. D. ; Wang, H. B.</creator><creatorcontrib>Liu, J. P. ; Ryou, J.-H. ; Dupuis, R. D. ; Han, J. ; Shen, G. D. ; Wang, H. B.</creatorcontrib><description>Carrier distributions governed by hole transport in InGaN∕GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in LEDs with conventional MQW active regions at a current of 20mA. A decrease in the thickness or the height of the quantum-well potential barrier enhanced hole injection into the MQWs located near the n-GaN layer. Reducing the thickness of a GaN quantum-well barrier between the blue QW and green QW did not degrade the electroluminescence (EL) intensity of the LED. In contrast, reducing the potential height of the barrier with material of possibly compromised quality resulted in a degradation of the EL intensity of the LED.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2957667</identifier><language>eng</language><ispartof>Applied physics letters, 2008-07, Vol.93 (2)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-f66452b719fcc1e87854c3245bc14bc4eddf3432c3985343276c9082d2c22bee3</citedby><cites>FETCH-LOGICAL-c225t-f66452b719fcc1e87854c3245bc14bc4eddf3432c3985343276c9082d2c22bee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Liu, J. P.</creatorcontrib><creatorcontrib>Ryou, J.-H.</creatorcontrib><creatorcontrib>Dupuis, R. D.</creatorcontrib><creatorcontrib>Han, J.</creatorcontrib><creatorcontrib>Shen, G. D.</creatorcontrib><creatorcontrib>Wang, H. B.</creatorcontrib><title>Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes</title><title>Applied physics letters</title><description>Carrier distributions governed by hole transport in InGaN∕GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in LEDs with conventional MQW active regions at a current of 20mA. A decrease in the thickness or the height of the quantum-well potential barrier enhanced hole injection into the MQWs located near the n-GaN layer. Reducing the thickness of a GaN quantum-well barrier between the blue QW and green QW did not degrade the electroluminescence (EL) intensity of the LED. In contrast, reducing the potential height of the barrier with material of possibly compromised quality resulted in a degradation of the EL intensity of the LED.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotUEtOwzAUtBBIhMKCG3jLIsWf2E6WUEGpVMEG1pHj2K1R4gTbASFxAC7ABTkJrsjmzZvRzCwGgEuMlhhxeo2XpGKCc3EEMoyEyCnG5THIEEI05xXDp-AshNdEGaE0A1-30nurPdTGaBXh4OB-6DSMXrowDj5C6VqoZlNrQ_S2maJNPuvgxq3l4-_3T7qwn7poxxR9m6SLUw8_dNfBdxtsk8TO7vYx172N0bpdKhpaHc7BiZFd0BczLsDL_d3z6iHfPq03q5ttrghhMTecF4w0AldGKaxLUbJCUVKwRuGiUYVuW0MLShStSnZ4BFcVKklLUr7Rmi7A1X-v8kMIXpt69LaX_rPGqD7MVuN6no3-AXzPYjk</recordid><startdate>20080714</startdate><enddate>20080714</enddate><creator>Liu, J. 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D.</creatorcontrib><creatorcontrib>Han, J.</creatorcontrib><creatorcontrib>Shen, G. D.</creatorcontrib><creatorcontrib>Wang, H. B.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, J. P.</au><au>Ryou, J.-H.</au><au>Dupuis, R. D.</au><au>Han, J.</au><au>Shen, G. D.</au><au>Wang, H. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes</atitle><jtitle>Applied physics letters</jtitle><date>2008-07-14</date><risdate>2008</risdate><volume>93</volume><issue>2</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Carrier distributions governed by hole transport in InGaN∕GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in LEDs with conventional MQW active regions at a current of 20mA. A decrease in the thickness or the height of the quantum-well potential barrier enhanced hole injection into the MQWs located near the n-GaN layer. Reducing the thickness of a GaN quantum-well barrier between the blue QW and green QW did not degrade the electroluminescence (EL) intensity of the LED. In contrast, reducing the potential height of the barrier with material of possibly compromised quality resulted in a degradation of the EL intensity of the LED.</abstract><doi>10.1063/1.2957667</doi></addata></record> |
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| ispartof | Applied physics letters, 2008-07, Vol.93 (2) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes |
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