Conducting transition metal nitride thin films with tailored cell sizes: The case of δ-TixTa1−xN
We present results on the stability and tailoring of the cell size of conducting δ-TixTa1−xN obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respe...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2008-07, Vol.93 (1) |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 93 |
| creator | Koutsokeras, L. E. Abadias, G. Lekka, Ch. E. Matenoglou, G. M. Anagnostopoulos, D. F. Evangelakis, G. A. Patsalas, P. |
| description | We present results on the stability and tailoring of the cell size of conducting δ-TixTa1−xN obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard’s rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ-TixTa1−xN films (ρ=180Ωcm) are similar to those of TiN and TaN. |
| doi_str_mv | 10.1063/1.2955838 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2955838</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2955838</sourcerecordid><originalsourceid>FETCH-LOGICAL-c159t-9453ebc2049aaa510638be0126cd0b3a9b834f1cd7d428c4610bb059f2ecc9bd3</originalsourceid><addsrcrecordid>eNotkDtOxDAURS0EEmGgYAevpcjgF8dJTIciGJBG0IQ68i_EKB9kGzGwAmrWwjpYBCuBEVMd3eZI9xByinSJtGDnuMwE5xWr9kiCtCxThljtk4RSytJCcDwkRyE8_U2eMZYQXc-TedHRTY8QvZyCi26eYLRRDjC56J2xEHs3QeeGMcCriz1E6YbZWwPaDgME927DBTS9BS2DhbmD76-0cZtG4s_H5-bumBx0cgj2ZMcFebi-auqbdH2_uq0v16lGLmIqcs6s0hnNhZSSb-9UylLMCm2oYlKoiuUdalOaPKt0XiBVinLRZVZroQxbkLN_r_ZzCN527bN3o_RvLdJ2q2ux3dVhv-99WU8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Conducting transition metal nitride thin films with tailored cell sizes: The case of δ-TixTa1−xN</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Koutsokeras, L. E. ; Abadias, G. ; Lekka, Ch. E. ; Matenoglou, G. M. ; Anagnostopoulos, D. F. ; Evangelakis, G. A. ; Patsalas, P.</creator><creatorcontrib>Koutsokeras, L. E. ; Abadias, G. ; Lekka, Ch. E. ; Matenoglou, G. M. ; Anagnostopoulos, D. F. ; Evangelakis, G. A. ; Patsalas, P.</creatorcontrib><description>We present results on the stability and tailoring of the cell size of conducting δ-TixTa1−xN obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard’s rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ-TixTa1−xN films (ρ=180Ωcm) are similar to those of TiN and TaN.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2955838</identifier><language>eng</language><ispartof>Applied physics letters, 2008-07, Vol.93 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c159t-9453ebc2049aaa510638be0126cd0b3a9b834f1cd7d428c4610bb059f2ecc9bd3</citedby><cites>FETCH-LOGICAL-c159t-9453ebc2049aaa510638be0126cd0b3a9b834f1cd7d428c4610bb059f2ecc9bd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids></links><search><creatorcontrib>Koutsokeras, L. E.</creatorcontrib><creatorcontrib>Abadias, G.</creatorcontrib><creatorcontrib>Lekka, Ch. E.</creatorcontrib><creatorcontrib>Matenoglou, G. M.</creatorcontrib><creatorcontrib>Anagnostopoulos, D. F.</creatorcontrib><creatorcontrib>Evangelakis, G. A.</creatorcontrib><creatorcontrib>Patsalas, P.</creatorcontrib><title>Conducting transition metal nitride thin films with tailored cell sizes: The case of δ-TixTa1−xN</title><title>Applied physics letters</title><description>We present results on the stability and tailoring of the cell size of conducting δ-TixTa1−xN obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard’s rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ-TixTa1−xN films (ρ=180Ωcm) are similar to those of TiN and TaN.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkDtOxDAURS0EEmGgYAevpcjgF8dJTIciGJBG0IQ68i_EKB9kGzGwAmrWwjpYBCuBEVMd3eZI9xByinSJtGDnuMwE5xWr9kiCtCxThljtk4RSytJCcDwkRyE8_U2eMZYQXc-TedHRTY8QvZyCi26eYLRRDjC56J2xEHs3QeeGMcCriz1E6YbZWwPaDgME927DBTS9BS2DhbmD76-0cZtG4s_H5-bumBx0cgj2ZMcFebi-auqbdH2_uq0v16lGLmIqcs6s0hnNhZSSb-9UylLMCm2oYlKoiuUdalOaPKt0XiBVinLRZVZroQxbkLN_r_ZzCN527bN3o_RvLdJ2q2ux3dVhv-99WU8</recordid><startdate>20080707</startdate><enddate>20080707</enddate><creator>Koutsokeras, L. E.</creator><creator>Abadias, G.</creator><creator>Lekka, Ch. E.</creator><creator>Matenoglou, G. M.</creator><creator>Anagnostopoulos, D. F.</creator><creator>Evangelakis, G. A.</creator><creator>Patsalas, P.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080707</creationdate><title>Conducting transition metal nitride thin films with tailored cell sizes: The case of δ-TixTa1−xN</title><author>Koutsokeras, L. E. ; Abadias, G. ; Lekka, Ch. E. ; Matenoglou, G. M. ; Anagnostopoulos, D. F. ; Evangelakis, G. A. ; Patsalas, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c159t-9453ebc2049aaa510638be0126cd0b3a9b834f1cd7d428c4610bb059f2ecc9bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Koutsokeras, L. E.</creatorcontrib><creatorcontrib>Abadias, G.</creatorcontrib><creatorcontrib>Lekka, Ch. E.</creatorcontrib><creatorcontrib>Matenoglou, G. M.</creatorcontrib><creatorcontrib>Anagnostopoulos, D. F.</creatorcontrib><creatorcontrib>Evangelakis, G. A.</creatorcontrib><creatorcontrib>Patsalas, P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Koutsokeras, L. E.</au><au>Abadias, G.</au><au>Lekka, Ch. E.</au><au>Matenoglou, G. M.</au><au>Anagnostopoulos, D. F.</au><au>Evangelakis, G. A.</au><au>Patsalas, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conducting transition metal nitride thin films with tailored cell sizes: The case of δ-TixTa1−xN</atitle><jtitle>Applied physics letters</jtitle><date>2008-07-07</date><risdate>2008</risdate><volume>93</volume><issue>1</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We present results on the stability and tailoring of the cell size of conducting δ-TixTa1−xN obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard’s rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ-TixTa1−xN films (ρ=180Ωcm) are similar to those of TiN and TaN.</abstract><doi>10.1063/1.2955838</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-07, Vol.93 (1) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2955838 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Conducting transition metal nitride thin films with tailored cell sizes: The case of δ-TixTa1−xN |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T21%3A39%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Conducting%20transition%20metal%20nitride%20thin%20films%20with%20tailored%20cell%20sizes:%20The%20case%20of%20%CE%B4-TixTa1%E2%88%92xN&rft.jtitle=Applied%20physics%20letters&rft.au=Koutsokeras,%20L.%20E.&rft.date=2008-07-07&rft.volume=93&rft.issue=1&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2955838&rft_dat=%3Ccrossref%3E10_1063_1_2955838%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |