Bending-stress-driven phase transitions in pentacene thin films for flexible organic field-effect transistors

Bending-stress-driven phase transitions in pentacene thin films for flexible organic field-effect transistors

The effects of bending strain on the structure and electrical characteristics of pentacene films in flexible devices were investigated. It was found that the volume fraction of bulk phase in the pentacene film increases from 10.7% to 27.7% under 1.1% of tensile strain but decreases to 3.5% under 1.0...

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Veröffentlicht in:Applied physics letters 2008-06, Vol.92 (24), p.243305-243305-3
Hauptverfasser: Yang, Chanwoo, Yoon, Jinhwan, Kim, Se Hyun, Hong, Kipyo, Chung, Dae Sung, Heo, Kyuyoung, Park, Chan Eon, Ree, Moonhor
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container_end_page 243305-3
container_issue 24
container_start_page 243305
container_title Applied physics letters
container_volume 92
creator Yang, Chanwoo
Yoon, Jinhwan
Kim, Se Hyun
Hong, Kipyo
Chung, Dae Sung
Heo, Kyuyoung
Park, Chan Eon
Ree, Moonhor
description The effects of bending strain on the structure and electrical characteristics of pentacene films in flexible devices were investigated. It was found that the volume fraction of bulk phase in the pentacene film increases from 10.7% to 27.7% under 1.1% of tensile strain but decreases to 3.5% under 1.0% of compressive strain. These bending-stress-driven phase transitions between the bulk phase and the thin-film phase in the pentacene film resulted in the changes in field-effect mobility, and were driven by the differences between the in-plane dimensions of the crystal unit cells of the two phases to reduce the external bending stress.
doi_str_mv 10.1063/1.2948862
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title Bending-stress-driven phase transitions in pentacene thin films for flexible organic field-effect transistors
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