Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide- semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current...

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Veröffentlicht in:	Applied physics letters 2008-06, Vol.92 (24), p.243501-243501-3
Hauptverfasser:	Chen, Jone F., Tian, Kuen-Shiuan, Chen, Shiang-Yu, Lee, J. R., Wu, Kuo-Ming, Liu, C. M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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