Ion irradiation-induced local structural changes in amorphous Ge2Sb2Te5 thin film

The crystallization kinetics of as-deposited and ion implanted amorphous Ge2Sb2Te5 thin films has been measured by time resolved reflectivity. An enhancement of the crystallization process occurred in the implanted samples. Raman scattering analysis was used to correlate the stability of the amorpho...

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Veröffentlicht in:	Applied physics letters 2008-06, Vol.92 (24)
Hauptverfasser:	De Bastiani, R., Piro, A. M., Grimaldi, M. G., Rimini, E., Baratta, G. A., Strazzulla, G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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