Analysis of barrier height at crystalline domain boundary and in-domain mobility in pentacene polycrystalline films on SiO2

Crystalline domain size and temperature dependences of the carrier mobility of commonly used pentacene polycrystalline films on SiO2 have been studied by four-point-probe field-effect transistor measurements. The mobility is found to be proportional to the crystalline domain size and thermally activ...

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Veröffentlicht in:	Applied physics letters 2008-06, Vol.92 (24)
Hauptverfasser:	Matsubara, Ryousuke, Ohashi, Noboru, Sakai, Masatoshi, Kudo, Kazuhiro, Nakamura, Masakazu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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