Enhanced terahertz radiation from high stacking fault density nonpolar GaN

Enhanced terahertz radiation from high stacking fault density nonpolar GaN

Terahertz emission from high stacking fault density m-GaN has been observed using ultrafast pulse excitation. The terahertz signal exhibits a 360° periodicity with sample rotation and a polarity flip at 180°, characteristic of real carrier transport in an in-plane electric field parallel to the c ax...

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Veröffentlicht in:Applied physics letters 2008-06, Vol.92 (24)
Hauptverfasser: Metcalfe, Grace D., Shen, Hongen, Wraback, Michael, Hirai, Asako, Wu, Feng, Speck, James S.
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container_issue 24
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container_title Applied physics letters
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creator Metcalfe, Grace D.
Shen, Hongen
Wraback, Michael
Hirai, Asako
Wu, Feng
Speck, James S.
description Terahertz emission from high stacking fault density m-GaN has been observed using ultrafast pulse excitation. The terahertz signal exhibits a 360° periodicity with sample rotation and a polarity flip at 180°, characteristic of real carrier transport in an in-plane electric field parallel to the c axis induced by stacking fault (SF)-terminated internal polarization at wurtzite domain boundaries. The terahertz emission can be enhanced by several times relative to that from a SF-free m-GaN sample, for which the terahertz signal emanates from surface surge currents and diffusion-driven carrier transport normal to the surface and is independent of the c-axis orientation.
doi_str_mv 10.1063/1.2937911
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2937911</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2937911</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-b7793f5f63f9b34eb56c28541f0f3a1333edf1628c42ed99229775fc4794cc933</originalsourceid><addsrcrecordid>eNotkLFOwzAUAC0EEqEw8AdeGVL8_OI4HlFVWlBFlzJHjmM3htSpbDOUrwdEp9MtNxwh98DmwGp8hDlXKBXABSmASVkiQHNJCsYYlrUScE1uUvr4VcERC_K6DIMOxvY026gHG_M3jbr3OvspUBenAx38fqApa_Ppw546_TVm2tuQfD7RMIXjNOpIV_rtllw5PSZ7d-aMvD8vd4t1udmuXhZPm9JwJXLZSanQCVejUx1WthO14Y2owDGHGhDR9g5q3piK214pzpWUwplKqsoYhTgjD_9dE6eUonXtMfqDjqcWWPs3oYX2PAF_AJ5RTmU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Enhanced terahertz radiation from high stacking fault density nonpolar GaN</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Metcalfe, Grace D. ; Shen, Hongen ; Wraback, Michael ; Hirai, Asako ; Wu, Feng ; Speck, James S.</creator><creatorcontrib>Metcalfe, Grace D. ; Shen, Hongen ; Wraback, Michael ; Hirai, Asako ; Wu, Feng ; Speck, James S.</creatorcontrib><description>Terahertz emission from high stacking fault density m-GaN has been observed using ultrafast pulse excitation. The terahertz signal exhibits a 360° periodicity with sample rotation and a polarity flip at 180°, characteristic of real carrier transport in an in-plane electric field parallel to the c axis induced by stacking fault (SF)-terminated internal polarization at wurtzite domain boundaries. The terahertz emission can be enhanced by several times relative to that from a SF-free m-GaN sample, for which the terahertz signal emanates from surface surge currents and diffusion-driven carrier transport normal to the surface and is independent of the c-axis orientation.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2937911</identifier><language>eng</language><ispartof>Applied physics letters, 2008-06, Vol.92 (24)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-b7793f5f63f9b34eb56c28541f0f3a1333edf1628c42ed99229775fc4794cc933</citedby><cites>FETCH-LOGICAL-c295t-b7793f5f63f9b34eb56c28541f0f3a1333edf1628c42ed99229775fc4794cc933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,782,786,27931,27932</link.rule.ids></links><search><creatorcontrib>Metcalfe, Grace D.</creatorcontrib><creatorcontrib>Shen, Hongen</creatorcontrib><creatorcontrib>Wraback, Michael</creatorcontrib><creatorcontrib>Hirai, Asako</creatorcontrib><creatorcontrib>Wu, Feng</creatorcontrib><creatorcontrib>Speck, James S.</creatorcontrib><title>Enhanced terahertz radiation from high stacking fault density nonpolar GaN</title><title>Applied physics letters</title><description>Terahertz emission from high stacking fault density m-GaN has been observed using ultrafast pulse excitation. The terahertz signal exhibits a 360° periodicity with sample rotation and a polarity flip at 180°, characteristic of real carrier transport in an in-plane electric field parallel to the c axis induced by stacking fault (SF)-terminated internal polarization at wurtzite domain boundaries. The terahertz emission can be enhanced by several times relative to that from a SF-free m-GaN sample, for which the terahertz signal emanates from surface surge currents and diffusion-driven carrier transport normal to the surface and is independent of the c-axis orientation.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkLFOwzAUAC0EEqEw8AdeGVL8_OI4HlFVWlBFlzJHjmM3htSpbDOUrwdEp9MtNxwh98DmwGp8hDlXKBXABSmASVkiQHNJCsYYlrUScE1uUvr4VcERC_K6DIMOxvY026gHG_M3jbr3OvspUBenAx38fqApa_Ppw546_TVm2tuQfD7RMIXjNOpIV_rtllw5PSZ7d-aMvD8vd4t1udmuXhZPm9JwJXLZSanQCVejUx1WthO14Y2owDGHGhDR9g5q3piK214pzpWUwplKqsoYhTgjD_9dE6eUonXtMfqDjqcWWPs3oYX2PAF_AJ5RTmU</recordid><startdate>20080616</startdate><enddate>20080616</enddate><creator>Metcalfe, Grace D.</creator><creator>Shen, Hongen</creator><creator>Wraback, Michael</creator><creator>Hirai, Asako</creator><creator>Wu, Feng</creator><creator>Speck, James S.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080616</creationdate><title>Enhanced terahertz radiation from high stacking fault density nonpolar GaN</title><author>Metcalfe, Grace D. ; Shen, Hongen ; Wraback, Michael ; Hirai, Asako ; Wu, Feng ; Speck, James S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-b7793f5f63f9b34eb56c28541f0f3a1333edf1628c42ed99229775fc4794cc933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Metcalfe, Grace D.</creatorcontrib><creatorcontrib>Shen, Hongen</creatorcontrib><creatorcontrib>Wraback, Michael</creatorcontrib><creatorcontrib>Hirai, Asako</creatorcontrib><creatorcontrib>Wu, Feng</creatorcontrib><creatorcontrib>Speck, James S.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Metcalfe, Grace D.</au><au>Shen, Hongen</au><au>Wraback, Michael</au><au>Hirai, Asako</au><au>Wu, Feng</au><au>Speck, James S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced terahertz radiation from high stacking fault density nonpolar GaN</atitle><jtitle>Applied physics letters</jtitle><date>2008-06-16</date><risdate>2008</risdate><volume>92</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Terahertz emission from high stacking fault density m-GaN has been observed using ultrafast pulse excitation. The terahertz signal exhibits a 360° periodicity with sample rotation and a polarity flip at 180°, characteristic of real carrier transport in an in-plane electric field parallel to the c axis induced by stacking fault (SF)-terminated internal polarization at wurtzite domain boundaries. The terahertz emission can be enhanced by several times relative to that from a SF-free m-GaN sample, for which the terahertz signal emanates from surface surge currents and diffusion-driven carrier transport normal to the surface and is independent of the c-axis orientation.</abstract><doi>10.1063/1.2937911</doi></addata></record>
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title Enhanced terahertz radiation from high stacking fault density nonpolar GaN
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-05T01%3A03%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhanced%20terahertz%20radiation%20from%20high%20stacking%20fault%20density%20nonpolar%20GaN&rft.jtitle=Applied%20physics%20letters&rft.au=Metcalfe,%20Grace%20D.&rft.date=2008-06-16&rft.volume=92&rft.issue=24&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2937911&rft_dat=%3Ccrossref%3E10_1063_1_2937911%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true