Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)
ZnO nanowires were grown on 2 - μ m -thick GaN templates by chemical vapor deposition without employing any metal catalysts. The GaN template was deposited by metal-organic chemical vapor deposition on a c -plane sapphire substrate. The diameters of the resulting nanowires were in the range of 40 -...
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| Veröffentlicht in: | Applied physics letters 2008-05, Vol.92 (20), p.203110-203110-3 |
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| container_end_page | 203110-3 |
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| container_title | Applied physics letters |
| container_volume | 92 |
| creator | Tsao, F. C. Chen, J. Y. Kuo, C. H. Chi, G. C. Pan, C. J. Huang, P. J. Tun, C. J. Pong, B. J. Hsueh, T. H. Chang, C. Y. Pearton, S. J. Ren, F. |
| description | ZnO nanowires were grown on
2
-
μ
m
-thick GaN templates by chemical vapor deposition without employing any metal catalysts. The GaN template was deposited by metal-organic chemical vapor deposition on a
c
-plane sapphire substrate. The diameters of the resulting nanowires were in the range of
40
-
250
nm
depending on growth time. The ZnO nanowires were vertically well aligned with uniform length, diameter, and distribution density as revealed by electron microscopy. X-ray diffraction spectra showed that ZnO grew in single
c
-axis orientation with the
c
axis normal to the GaN basal plane, indicating a heteroepitaxial relationship of
(
0002
)
Zn
O
||
(
0002
)
Ga
N
. The lattice constant of the
c
axis of the ZnO nanowires with diameter of
40
nm
was
5.211
Å
, which is larger than that of bulk ZnO
(
5.207
Å
)
. The ZnO nanowires exhibit a residual tensile strain along the
c
axis, which decreases with increasing diameter. |
| doi_str_mv | 10.1063/1.2936090 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2936090</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-7493ba54f0bde647f040ca46b25a2418a31594d1d16700f80bdb85cc894ab3b53</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKsH_0GO9rBtZpPsx0WQolUoFkQvvYRJNmsj7e6SrJb996a0HoUXhoFnPngIuQU2BZbxGUzTkmesZGdkBCzPEw5QnJMRY4wnWSnhklyF8BVbmXI-Ips3G1z1jVsaeo-uoTHrZkUbbNq98zbQT9_uG6oHarDH7RD6pPbWUrOxO2fi3A92raeV7drgetc2NGaBr7OAXbeJG-hdPAaTa3JR4zbYm1Mdk4-nx_f5c7JcLV7mD8vEpIXok1yUXKMUNdOVzUReM8EMikynElMBBXKQpaiggixnrC4ipgtpTFEK1FxLPiaT417j2xC8rVXn3Q79oICpgyIF6qQosvdHNhjX4-H5_-E_T-roScWs-S9Pa23M</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Tsao, F. C. ; Chen, J. Y. ; Kuo, C. H. ; Chi, G. C. ; Pan, C. J. ; Huang, P. J. ; Tun, C. J. ; Pong, B. J. ; Hsueh, T. H. ; Chang, C. Y. ; Pearton, S. J. ; Ren, F.</creator><creatorcontrib>Tsao, F. C. ; Chen, J. Y. ; Kuo, C. H. ; Chi, G. C. ; Pan, C. J. ; Huang, P. J. ; Tun, C. J. ; Pong, B. J. ; Hsueh, T. H. ; Chang, C. Y. ; Pearton, S. J. ; Ren, F.</creatorcontrib><description>ZnO nanowires were grown on
2
-
μ
m
-thick GaN templates by chemical vapor deposition without employing any metal catalysts. The GaN template was deposited by metal-organic chemical vapor deposition on a
c
-plane sapphire substrate. The diameters of the resulting nanowires were in the range of
40
-
250
nm
depending on growth time. The ZnO nanowires were vertically well aligned with uniform length, diameter, and distribution density as revealed by electron microscopy. X-ray diffraction spectra showed that ZnO grew in single
c
-axis orientation with the
c
axis normal to the GaN basal plane, indicating a heteroepitaxial relationship of
(
0002
)
Zn
O
||
(
0002
)
Ga
N
. The lattice constant of the
c
axis of the ZnO nanowires with diameter of
40
nm
was
5.211
Å
, which is larger than that of bulk ZnO
(
5.207
Å
)
. The ZnO nanowires exhibit a residual tensile strain along the
c
axis, which decreases with increasing diameter.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2936090</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2008-05, Vol.92 (20), p.203110-203110-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-7493ba54f0bde647f040ca46b25a2418a31594d1d16700f80bdb85cc894ab3b53</citedby><cites>FETCH-LOGICAL-c284t-7493ba54f0bde647f040ca46b25a2418a31594d1d16700f80bdb85cc894ab3b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2936090$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Tsao, F. C.</creatorcontrib><creatorcontrib>Chen, J. Y.</creatorcontrib><creatorcontrib>Kuo, C. H.</creatorcontrib><creatorcontrib>Chi, G. C.</creatorcontrib><creatorcontrib>Pan, C. J.</creatorcontrib><creatorcontrib>Huang, P. J.</creatorcontrib><creatorcontrib>Tun, C. J.</creatorcontrib><creatorcontrib>Pong, B. J.</creatorcontrib><creatorcontrib>Hsueh, T. H.</creatorcontrib><creatorcontrib>Chang, C. Y.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><creatorcontrib>Ren, F.</creatorcontrib><title>Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)</title><title>Applied physics letters</title><description>ZnO nanowires were grown on
2
-
μ
m
-thick GaN templates by chemical vapor deposition without employing any metal catalysts. The GaN template was deposited by metal-organic chemical vapor deposition on a
c
-plane sapphire substrate. The diameters of the resulting nanowires were in the range of
40
-
250
nm
depending on growth time. The ZnO nanowires were vertically well aligned with uniform length, diameter, and distribution density as revealed by electron microscopy. X-ray diffraction spectra showed that ZnO grew in single
c
-axis orientation with the
c
axis normal to the GaN basal plane, indicating a heteroepitaxial relationship of
(
0002
)
Zn
O
||
(
0002
)
Ga
N
. The lattice constant of the
c
axis of the ZnO nanowires with diameter of
40
nm
was
5.211
Å
, which is larger than that of bulk ZnO
(
5.207
Å
)
. The ZnO nanowires exhibit a residual tensile strain along the
c
axis, which decreases with increasing diameter.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0GO9rBtZpPsx0WQolUoFkQvvYRJNmsj7e6SrJb996a0HoUXhoFnPngIuQU2BZbxGUzTkmesZGdkBCzPEw5QnJMRY4wnWSnhklyF8BVbmXI-Ips3G1z1jVsaeo-uoTHrZkUbbNq98zbQT9_uG6oHarDH7RD6pPbWUrOxO2fi3A92raeV7drgetc2NGaBr7OAXbeJG-hdPAaTa3JR4zbYm1Mdk4-nx_f5c7JcLV7mD8vEpIXok1yUXKMUNdOVzUReM8EMikynElMBBXKQpaiggixnrC4ipgtpTFEK1FxLPiaT417j2xC8rVXn3Q79oICpgyIF6qQosvdHNhjX4-H5_-E_T-roScWs-S9Pa23M</recordid><startdate>20080519</startdate><enddate>20080519</enddate><creator>Tsao, F. C.</creator><creator>Chen, J. Y.</creator><creator>Kuo, C. H.</creator><creator>Chi, G. C.</creator><creator>Pan, C. J.</creator><creator>Huang, P. J.</creator><creator>Tun, C. J.</creator><creator>Pong, B. J.</creator><creator>Hsueh, T. H.</creator><creator>Chang, C. Y.</creator><creator>Pearton, S. J.</creator><creator>Ren, F.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080519</creationdate><title>Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)</title><author>Tsao, F. C. ; Chen, J. Y. ; Kuo, C. H. ; Chi, G. C. ; Pan, C. J. ; Huang, P. J. ; Tun, C. J. ; Pong, B. J. ; Hsueh, T. H. ; Chang, C. Y. ; Pearton, S. J. ; Ren, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-7493ba54f0bde647f040ca46b25a2418a31594d1d16700f80bdb85cc894ab3b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsao, F. C.</creatorcontrib><creatorcontrib>Chen, J. Y.</creatorcontrib><creatorcontrib>Kuo, C. H.</creatorcontrib><creatorcontrib>Chi, G. C.</creatorcontrib><creatorcontrib>Pan, C. J.</creatorcontrib><creatorcontrib>Huang, P. J.</creatorcontrib><creatorcontrib>Tun, C. J.</creatorcontrib><creatorcontrib>Pong, B. J.</creatorcontrib><creatorcontrib>Hsueh, T. H.</creatorcontrib><creatorcontrib>Chang, C. Y.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><creatorcontrib>Ren, F.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsao, F. C.</au><au>Chen, J. Y.</au><au>Kuo, C. H.</au><au>Chi, G. C.</au><au>Pan, C. J.</au><au>Huang, P. J.</au><au>Tun, C. J.</au><au>Pong, B. J.</au><au>Hsueh, T. H.</au><au>Chang, C. Y.</au><au>Pearton, S. J.</au><au>Ren, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)</atitle><jtitle>Applied physics letters</jtitle><date>2008-05-19</date><risdate>2008</risdate><volume>92</volume><issue>20</issue><spage>203110</spage><epage>203110-3</epage><pages>203110-203110-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>ZnO nanowires were grown on
2
-
μ
m
-thick GaN templates by chemical vapor deposition without employing any metal catalysts. The GaN template was deposited by metal-organic chemical vapor deposition on a
c
-plane sapphire substrate. The diameters of the resulting nanowires were in the range of
40
-
250
nm
depending on growth time. The ZnO nanowires were vertically well aligned with uniform length, diameter, and distribution density as revealed by electron microscopy. X-ray diffraction spectra showed that ZnO grew in single
c
-axis orientation with the
c
axis normal to the GaN basal plane, indicating a heteroepitaxial relationship of
(
0002
)
Zn
O
||
(
0002
)
Ga
N
. The lattice constant of the
c
axis of the ZnO nanowires with diameter of
40
nm
was
5.211
Å
, which is larger than that of bulk ZnO
(
5.207
Å
)
. The ZnO nanowires exhibit a residual tensile strain along the
c
axis, which decreases with increasing diameter.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2936090</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-05, Vol.92 (20), p.203110-203110-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2936090 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) |
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