DNA-modified indium phosphide Schottky device

High quality Schottky sandwich devices were fabricated on an InP single crystal by solution processing a semiconducting polymer, DNA, as the metal electrodes. We observed that DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor of 1.26, and that DNA film increased the effective barrier height by influencing the space charge region of InP. Modeling, which includes a transport mechanism, reveals thermionic emission to be the dominant transport mechanisms for the diode (ideality factor n < 1.3 ). We proposed that DNA could be a semiconductorlike material with a wide optical band energy gap of 3.95 eV from its optical absorbance characteristics. We also evaluated photovoltaic characteristic of the device under an illumination condition.