GaMnAs-based hybrid multiferroic memory device
We report a nonvolatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along...
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| Veröffentlicht in: | Applied physics letters 2008-05, Vol.92 (19), p.192501-192501-3 |
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| container_end_page | 192501-3 |
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| container_issue | 19 |
| container_start_page | 192501 |
| container_title | Applied physics letters |
| container_volume | 92 |
| creator | Overby, M. Chernyshov, A. Rokhinson, L. P. Liu, X. Furdyna, J. K. |
| description | We report a nonvolatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field. |
| doi_str_mv | 10.1063/1.2917481 |
| format | Article |
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K.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080512</creationdate><title>GaMnAs-based hybrid multiferroic memory device</title><author>Overby, M. ; Chernyshov, A. ; Rokhinson, L. P. ; Liu, X. ; Furdyna, J. K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-31c94abf38f295fb504b3fc7e9c813ae9ee067899e38cd613c613deed70018a03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Overby, M.</creatorcontrib><creatorcontrib>Chernyshov, A.</creatorcontrib><creatorcontrib>Rokhinson, L. P.</creatorcontrib><creatorcontrib>Liu, X.</creatorcontrib><creatorcontrib>Furdyna, J. K.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Overby, M.</au><au>Chernyshov, A.</au><au>Rokhinson, L. P.</au><au>Liu, X.</au><au>Furdyna, J. K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaMnAs-based hybrid multiferroic memory device</atitle><jtitle>Applied physics letters</jtitle><date>2008-05-12</date><risdate>2008</risdate><volume>92</volume><issue>19</issue><spage>192501</spage><epage>192501-3</epage><pages>192501-192501-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report a nonvolatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2917481</doi><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-05, Vol.92 (19), p.192501-192501-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2917481 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | GaMnAs-based hybrid multiferroic memory device |
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