Metal-semiconductor-metal Ge photodetectors integrated in silicon waveguides

Metal-semiconductor-metal (MSM) Ge photodetectors integrated in silicon-on-insulator waveguides using butt coupling configuration have been experimentally demonstrated. Bandwidths reach 28GHz under 6V bias at wavelengths of 1.31 and 1.55μm for a photodetector with 1μm electrode spacing, which is alm...

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Veröffentlicht in:	Applied physics letters 2008-04, Vol.92 (15)
Hauptverfasser:	Vivien, Laurent, Marris-Morini, Delphine, Fédéli, Jean-Marc, Rouvière, Mathieu, Damlencourt, Jean-François, El Melhaoui, Loubna, Le Roux, Xavier, Crozat, Paul, Mangeney, Juliette, Cassan, Eric, Laval, Suzanne
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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