Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach of modified laser lift-off (M-LLO) technique for patterning undoped GaN ( u - Ga N ) . The M-LLO consists in sequentially forming a two-dimensional triangular lattice pattern with a 4 μ m period on a...

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Veröffentlicht in:Applied physics letters 2008-04, Vol.92 (14), p.141104-141104-3
Hauptverfasser: Bao, Kui, Kang, Xiang Ning, Zhang, Bei, Dai, Tao, Sun, Yong Jian, Fu, Qiang, Lian, Gui Jun, Xiong, Guang Cheng, Zhang, Guo Yi, Chen, Yong
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container_issue 14
container_start_page 141104
container_title Applied physics letters
container_volume 92
creator Bao, Kui
Kang, Xiang Ning
Zhang, Bei
Dai, Tao
Sun, Yong Jian
Fu, Qiang
Lian, Gui Jun
Xiong, Guang Cheng
Zhang, Guo Yi
Chen, Yong
description To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach of modified laser lift-off (M-LLO) technique for patterning undoped GaN ( u - Ga N ) . The M-LLO consists in sequentially forming a two-dimensional triangular lattice pattern with a 4 μ m period on a polymer layer over a sapphire substrate backplane by UV imprint and delivering the pattern onto u - Ga N accompanied with the removal of the sapphire substrate. The enhancement of light extraction from GaN-based M-LLO LED with a reflective Ag film on the 120 nm deep u - Ga N pattern was about 31% and 100% compared to that of a LLO-LED with a reflective film and a conventional LED with a sapphire substrate, respectively.
doi_str_mv 10.1063/1.2906632
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title Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off
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