Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence
Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron conce...
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| Veröffentlicht in: | Journal of applied physics 2008-04, Vol.103 (7), p.073710-073710-7 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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