Electroless nickel/gold Ohmic contacts to p -type GaN
A solution based approach to forming Ohmic contacts to p -type GaN is described. Electroless plated Ni ∕ Au contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities ρ c in the region of 10 − 2 Ω cm 2 . These values are readily achieved after a rapid th...
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| Veröffentlicht in: | Applied physics letters 2008-02, Vol.92 (6), p.062113-062113-3 |
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| Sprache: | eng |
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| container_end_page | 062113-3 |
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| container_issue | 6 |
| container_start_page | 062113 |
| container_title | Applied physics letters |
| container_volume | 92 |
| creator | Lewis, L. Casey, D. P. Jeyaseelan, A. V. Rohan, J. F. Maaskant, P. P. |
| description | A solution based approach to forming Ohmic contacts to
p
-type GaN is described. Electroless plated
Ni
∕
Au
contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities
ρ
c
in the region of
10
−
2
Ω
cm
2
. These values are readily achieved after a rapid thermal annealing in an
O
2
atmosphere. The tunneling nature of the contact is confirmed via temperature dependant measurements. X-ray diffraction measurements confirm the similarity between evaporated and plated contacts. Current-photocurrent
(
I
-
L
)
and current-voltage
(
I
-
V
)
measurements from light emitting diodes formed using an electroless
p
-type contact are shown. Electroless deposition of the contact metals allows for a reduction in processing time and cost. |
| doi_str_mv | 10.1063/1.2842425 |
| format | Article |
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p
-type GaN is described. Electroless plated
Ni
∕
Au
contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities
ρ
c
in the region of
10
−
2
Ω
cm
2
. These values are readily achieved after a rapid thermal annealing in an
O
2
atmosphere. The tunneling nature of the contact is confirmed via temperature dependant measurements. X-ray diffraction measurements confirm the similarity between evaporated and plated contacts. Current-photocurrent
(
I
-
L
)
and current-voltage
(
I
-
V
)
measurements from light emitting diodes formed using an electroless
p
-type contact are shown. Electroless deposition of the contact metals allows for a reduction in processing time and cost.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2842425</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2008-02, Vol.92 (6), p.062113-062113-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-4876fe77b0d475a1da5168acc25b0da87215f2bf58b733de202fb68d59cf60163</citedby><cites>FETCH-LOGICAL-c319t-4876fe77b0d475a1da5168acc25b0da87215f2bf58b733de202fb68d59cf60163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2842425$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76127,76133</link.rule.ids></links><search><creatorcontrib>Lewis, L.</creatorcontrib><creatorcontrib>Casey, D. P.</creatorcontrib><creatorcontrib>Jeyaseelan, A. V.</creatorcontrib><creatorcontrib>Rohan, J. F.</creatorcontrib><creatorcontrib>Maaskant, P. P.</creatorcontrib><title>Electroless nickel/gold Ohmic contacts to p -type GaN</title><title>Applied physics letters</title><description>A solution based approach to forming Ohmic contacts to
p
-type GaN is described. Electroless plated
Ni
∕
Au
contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities
ρ
c
in the region of
10
−
2
Ω
cm
2
. These values are readily achieved after a rapid thermal annealing in an
O
2
atmosphere. The tunneling nature of the contact is confirmed via temperature dependant measurements. X-ray diffraction measurements confirm the similarity between evaporated and plated contacts. Current-photocurrent
(
I
-
L
)
and current-voltage
(
I
-
V
)
measurements from light emitting diodes formed using an electroless
p
-type contact are shown. Electroless deposition of the contact metals allows for a reduction in processing time and cost.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1j71OwzAYRS0EEqEw8AZeGdz6s-OfLEioKgWpogvMluPYJZDGUeylb09QOrAwXd2roysdhO6BLoFKvoIl0yUrmbhABVClCAfQl6iglHIiKwHX6Calr6kKxnmBxKbzLo-x8ynhvnXfvlsdYtfg_eexddjFPluXE84RD5jk0-Dx1r7doqtgu-TvzrlAH8-b9_UL2e23r-unHXEcqkxKrWTwStW0KZWw0FgBUlvnmJgmqxUDEVgdhK4V541nlIVa6kZULkgKki_Qw_zrxpjS6IMZxvZox5MBan59DZiz78Q-zmxybba5jf3_8B9pM0ubA_8BMhpbog</recordid><startdate>20080211</startdate><enddate>20080211</enddate><creator>Lewis, L.</creator><creator>Casey, D. P.</creator><creator>Jeyaseelan, A. V.</creator><creator>Rohan, J. F.</creator><creator>Maaskant, P. P.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080211</creationdate><title>Electroless nickel/gold Ohmic contacts to p -type GaN</title><author>Lewis, L. ; Casey, D. P. ; Jeyaseelan, A. V. ; Rohan, J. F. ; Maaskant, P. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-4876fe77b0d475a1da5168acc25b0da87215f2bf58b733de202fb68d59cf60163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lewis, L.</creatorcontrib><creatorcontrib>Casey, D. P.</creatorcontrib><creatorcontrib>Jeyaseelan, A. V.</creatorcontrib><creatorcontrib>Rohan, J. F.</creatorcontrib><creatorcontrib>Maaskant, P. P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lewis, L.</au><au>Casey, D. P.</au><au>Jeyaseelan, A. V.</au><au>Rohan, J. F.</au><au>Maaskant, P. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electroless nickel/gold Ohmic contacts to p -type GaN</atitle><jtitle>Applied physics letters</jtitle><date>2008-02-11</date><risdate>2008</risdate><volume>92</volume><issue>6</issue><spage>062113</spage><epage>062113-3</epage><pages>062113-062113-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A solution based approach to forming Ohmic contacts to
p
-type GaN is described. Electroless plated
Ni
∕
Au
contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities
ρ
c
in the region of
10
−
2
Ω
cm
2
. These values are readily achieved after a rapid thermal annealing in an
O
2
atmosphere. The tunneling nature of the contact is confirmed via temperature dependant measurements. X-ray diffraction measurements confirm the similarity between evaporated and plated contacts. Current-photocurrent
(
I
-
L
)
and current-voltage
(
I
-
V
)
measurements from light emitting diodes formed using an electroless
p
-type contact are shown. Electroless deposition of the contact metals allows for a reduction in processing time and cost.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2842425</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-02, Vol.92 (6), p.062113-062113-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2842425 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Electroless nickel/gold Ohmic contacts to p -type GaN |
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