A constructive combination of antireflection and intermediate-reflector layers for a - Si ∕ μ c - Si thin film solar cells
This device design approach combines sputter-deposited Ti O 2 antireflection layer (ARL) and plasma-enhanced chemical vapor deposition-grown Si O x intermediate-reflector layer (IRL) in superstrate a - Si ∕ μ c - Si thin film solar cell. The loss of current from either the component cells with indiv...
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| Veröffentlicht in: | Applied physics letters 2008-02, Vol.92 (5), p.053509-053509-3 |
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| container_end_page | 053509-3 |
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| container_issue | 5 |
| container_start_page | 053509 |
| container_title | Applied physics letters |
| container_volume | 92 |
| creator | Das, Chandan Lambertz, Andreas Huepkes, Juergen Reetz, Wilfried Finger, Friedhelm |
| description | This device design approach combines sputter-deposited
Ti
O
2
antireflection layer (ARL) and plasma-enhanced chemical vapor deposition-grown
Si
O
x
intermediate-reflector layer (IRL) in superstrate
a
-
Si
∕
μ
c
-
Si
thin film solar cell. The loss of current from either the component cells with individual application of ARL and IRL has been recovered with their combined application. With both ARL and IRL in
a
-
Si
∕
μ
c
-
Si
cell, (a) the top cell current and (b) the sum of top and bottom cell current increases. An initial efficiency of 11.8% [
V
oc
=
1.42
V
,
FF
=
0.74
,
J
sc
(
top
)
=
11.5
mA
cm
−
2
,
J
sc
(
bottom
)
=
11.2
mA
cm
−
2
] is achieved from such an
a
-
Si
∕
μ
c
-
Si
cell with a total Si layer thickness less than
2
μ
m
. |
| doi_str_mv | 10.1063/1.2841824 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2841824</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-e69c7932109e309d040d69307a56e72699fa4ba68bc34352d82ddad7d4af3af63</originalsourceid><addsrcrecordid>eNp1kDtOAzEQhi0EEiFQcAO3FAY_dr3rBimKeEmRKIDamvghjLy7yDZIKei5ALfhDByCk7AkKWioZv6ZX6N_PoSOGT1lVIozdsrbirW82kETRpuGCMbaXTShlAoiVc320UHOT6OsuRAT9DbDZuhzSS-mhFc3im4Zeihh6PHgMfQlJOejM-sJ9BaHvrjUORugOLLdDQlHWLmUsR9bwATfBfz9_oG_PrHZqPIYeuxD7HAeIiRsXIz5EO15iNkdbesUPVxe3M-vyeL26mY-WxAzflOIk8o0SnBGlRNUWVpRK5WgDdTSNVwq5aFagmyXRlSi5rbl1oJtbAVegJdiik42d00ach5D6-cUOkgrzaj-5aaZ3nIbvecbbzahrEH8b57pv_D0Gp74AcJJd3Y</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A constructive combination of antireflection and intermediate-reflector layers for a - Si ∕ μ c - Si thin film solar cells</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Das, Chandan ; Lambertz, Andreas ; Huepkes, Juergen ; Reetz, Wilfried ; Finger, Friedhelm</creator><creatorcontrib>Das, Chandan ; Lambertz, Andreas ; Huepkes, Juergen ; Reetz, Wilfried ; Finger, Friedhelm</creatorcontrib><description>This device design approach combines sputter-deposited
Ti
O
2
antireflection layer (ARL) and plasma-enhanced chemical vapor deposition-grown
Si
O
x
intermediate-reflector layer (IRL) in superstrate
a
-
Si
∕
μ
c
-
Si
thin film solar cell. The loss of current from either the component cells with individual application of ARL and IRL has been recovered with their combined application. With both ARL and IRL in
a
-
Si
∕
μ
c
-
Si
cell, (a) the top cell current and (b) the sum of top and bottom cell current increases. An initial efficiency of 11.8% [
V
oc
=
1.42
V
,
FF
=
0.74
,
J
sc
(
top
)
=
11.5
mA
cm
−
2
,
J
sc
(
bottom
)
=
11.2
mA
cm
−
2
] is achieved from such an
a
-
Si
∕
μ
c
-
Si
cell with a total Si layer thickness less than
2
μ
m
.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2841824</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2008-02, Vol.92 (5), p.053509-053509-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-e69c7932109e309d040d69307a56e72699fa4ba68bc34352d82ddad7d4af3af63</citedby><cites>FETCH-LOGICAL-c284t-e69c7932109e309d040d69307a56e72699fa4ba68bc34352d82ddad7d4af3af63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2841824$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Das, Chandan</creatorcontrib><creatorcontrib>Lambertz, Andreas</creatorcontrib><creatorcontrib>Huepkes, Juergen</creatorcontrib><creatorcontrib>Reetz, Wilfried</creatorcontrib><creatorcontrib>Finger, Friedhelm</creatorcontrib><title>A constructive combination of antireflection and intermediate-reflector layers for a - Si ∕ μ c - Si thin film solar cells</title><title>Applied physics letters</title><description>This device design approach combines sputter-deposited
Ti
O
2
antireflection layer (ARL) and plasma-enhanced chemical vapor deposition-grown
Si
O
x
intermediate-reflector layer (IRL) in superstrate
a
-
Si
∕
μ
c
-
Si
thin film solar cell. The loss of current from either the component cells with individual application of ARL and IRL has been recovered with their combined application. With both ARL and IRL in
a
-
Si
∕
μ
c
-
Si
cell, (a) the top cell current and (b) the sum of top and bottom cell current increases. An initial efficiency of 11.8% [
V
oc
=
1.42
V
,
FF
=
0.74
,
J
sc
(
top
)
=
11.5
mA
cm
−
2
,
J
sc
(
bottom
)
=
11.2
mA
cm
−
2
] is achieved from such an
a
-
Si
∕
μ
c
-
Si
cell with a total Si layer thickness less than
2
μ
m
.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kDtOAzEQhi0EEiFQcAO3FAY_dr3rBimKeEmRKIDamvghjLy7yDZIKei5ALfhDByCk7AkKWioZv6ZX6N_PoSOGT1lVIozdsrbirW82kETRpuGCMbaXTShlAoiVc320UHOT6OsuRAT9DbDZuhzSS-mhFc3im4Zeihh6PHgMfQlJOejM-sJ9BaHvrjUORugOLLdDQlHWLmUsR9bwATfBfz9_oG_PrHZqPIYeuxD7HAeIiRsXIz5EO15iNkdbesUPVxe3M-vyeL26mY-WxAzflOIk8o0SnBGlRNUWVpRK5WgDdTSNVwq5aFagmyXRlSi5rbl1oJtbAVegJdiik42d00ach5D6-cUOkgrzaj-5aaZ3nIbvecbbzahrEH8b57pv_D0Gp74AcJJd3Y</recordid><startdate>20080204</startdate><enddate>20080204</enddate><creator>Das, Chandan</creator><creator>Lambertz, Andreas</creator><creator>Huepkes, Juergen</creator><creator>Reetz, Wilfried</creator><creator>Finger, Friedhelm</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080204</creationdate><title>A constructive combination of antireflection and intermediate-reflector layers for a - Si ∕ μ c - Si thin film solar cells</title><author>Das, Chandan ; Lambertz, Andreas ; Huepkes, Juergen ; Reetz, Wilfried ; Finger, Friedhelm</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-e69c7932109e309d040d69307a56e72699fa4ba68bc34352d82ddad7d4af3af63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Das, Chandan</creatorcontrib><creatorcontrib>Lambertz, Andreas</creatorcontrib><creatorcontrib>Huepkes, Juergen</creatorcontrib><creatorcontrib>Reetz, Wilfried</creatorcontrib><creatorcontrib>Finger, Friedhelm</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Das, Chandan</au><au>Lambertz, Andreas</au><au>Huepkes, Juergen</au><au>Reetz, Wilfried</au><au>Finger, Friedhelm</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A constructive combination of antireflection and intermediate-reflector layers for a - Si ∕ μ c - Si thin film solar cells</atitle><jtitle>Applied physics letters</jtitle><date>2008-02-04</date><risdate>2008</risdate><volume>92</volume><issue>5</issue><spage>053509</spage><epage>053509-3</epage><pages>053509-053509-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>This device design approach combines sputter-deposited
Ti
O
2
antireflection layer (ARL) and plasma-enhanced chemical vapor deposition-grown
Si
O
x
intermediate-reflector layer (IRL) in superstrate
a
-
Si
∕
μ
c
-
Si
thin film solar cell. The loss of current from either the component cells with individual application of ARL and IRL has been recovered with their combined application. With both ARL and IRL in
a
-
Si
∕
μ
c
-
Si
cell, (a) the top cell current and (b) the sum of top and bottom cell current increases. An initial efficiency of 11.8% [
V
oc
=
1.42
V
,
FF
=
0.74
,
J
sc
(
top
)
=
11.5
mA
cm
−
2
,
J
sc
(
bottom
)
=
11.2
mA
cm
−
2
] is achieved from such an
a
-
Si
∕
μ
c
-
Si
cell with a total Si layer thickness less than
2
μ
m
.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2841824</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-02, Vol.92 (5), p.053509-053509-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2841824 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | A constructive combination of antireflection and intermediate-reflector layers for a - Si ∕ μ c - Si thin film solar cells |
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