Resilience of tunneling magnetoresistive heads against electrical overstress

Resilience of tunneling magnetoresistive heads against electrical overstress

The performance of tunneling magnetoresistive (TuMR) heads under electrical overstress and electrostatic discharge is investigated. Alumina-based TuMR longitudinal heads of the 3.5 in. 160 Gbytes ∕platter class are subjected to controlled stress until a predefined level of relative resistance drop (...

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Veröffentlicht in:Journal of applied physics 2008-04, Vol.103 (7), p.07F535-07F535-3
1. Verfasser: Guarisco, Davide
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creator Guarisco, Davide
description The performance of tunneling magnetoresistive (TuMR) heads under electrical overstress and electrostatic discharge is investigated. Alumina-based TuMR longitudinal heads of the 3.5 in. 160 Gbytes ∕platter class are subjected to controlled stress until a predefined level of relative resistance drop (5%-60%) is achieved. The bias current is then readjusted to achieve a constant bias voltage and dynamic-electric test is performed. It is found that the stressed heads still perform similarly to the unstressed ones up to a resistance drop of ∼ 30 % . Accelerated lifetime test did not detect statistically significant differences in reliability between the stressed and unstressed parts.
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title Resilience of tunneling magnetoresistive heads against electrical overstress
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