Thermal stability of Cu nanowires on a sapphire substrate

Cu nanowires with widths ranging from 110 to 300 nm were fabricated on a c -plane sapphire substrate using E -beam lithography and lift-off processes. Thermal annealing of these polycrystalline metal nanowires at 700 ° C in an inert (nitrogen) atmosphere showed that for lines of width 160 nm or less...

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Veröffentlicht in:Journal of applied physics 2008-01, Vol.103 (2), p.024315-024315-9
Hauptverfasser: Li, Hongwei, Biser, Jeffrey M., Perkins, Jason T., Dutta, Sreya, Vinci, Richard P., Chan, Helen M.
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Dutta, Sreya
Vinci, Richard P.
Chan, Helen M.
description Cu nanowires with widths ranging from 110 to 300 nm were fabricated on a c -plane sapphire substrate using E -beam lithography and lift-off processes. Thermal annealing of these polycrystalline metal nanowires at 700 ° C in an inert (nitrogen) atmosphere showed that for lines of width 160 nm or less, there was complete breakdown into widely spaced, individual beads in a short time (1 h). It was shown that the morphological changes were driven by reduction in the surface energy, with surface diffusion as the predominant transport mechanism. The spacing between the beads was approximately 1.8 times greater than the values predicted by Rayleigh instability theory for a free standing rod with equivalent radius. Based on thermodynamic and kinetic considerations, discrepancies between the experimental observations and the predictions of Rayleigh instability theory were attributed to the stabilization effect of the substrate.
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title Thermal stability of Cu nanowires on a sapphire substrate
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