Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas
Ga-face GaN∕AlGaN∕GaN heterostructures with different cap thicknesses are investigated by electroreflectance spectroscopy (ER). The voltage dependent electric field strengths of the barrier and cap layers are determined. The AlGaN electric field amounts of up to −2.6MV∕cm, whereas the GaN electric f...
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| Veröffentlicht in: | Applied physics letters 2008-01, Vol.92 (1) |
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| container_title | Applied physics letters |
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| creator | Buchheim, C. Goldhahn, R. Gobsch, G. Tonisch, K. Cimalla, V. Niebelschütz, F. Ambacher, O. |
| description | Ga-face GaN∕AlGaN∕GaN heterostructures with different cap thicknesses are investigated by electroreflectance spectroscopy (ER). The voltage dependent electric field strengths of the barrier and cap layers are determined. The AlGaN electric field amounts of up to −2.6MV∕cm, whereas the GaN electric field is always below 700kV∕cm. The two electric fields have opposite signs. Characteristic features in the voltage maps of the ER spectra are assigned to the formation/depletion of a two-dimensional electron gas below and a two-dimensional hole gas above the AlGaN barrier. Between −6.5 and 0V, both carrier gases coexist. |
| doi_str_mv | 10.1063/1.2830836 |
| format | Article |
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The voltage dependent electric field strengths of the barrier and cap layers are determined. The AlGaN electric field amounts of up to −2.6MV∕cm, whereas the GaN electric field is always below 700kV∕cm. The two electric fields have opposite signs. Characteristic features in the voltage maps of the ER spectra are assigned to the formation/depletion of a two-dimensional electron gas below and a two-dimensional hole gas above the AlGaN barrier. Between −6.5 and 0V, both carrier gases coexist.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2830836</identifier><language>eng</language><ispartof>Applied physics letters, 2008-01, Vol.92 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c159t-8608b207e74c4e1eb0161153691e2da1a13c1ce739d5a7d8fd3f92b73d3d333</citedby><cites>FETCH-LOGICAL-c159t-8608b207e74c4e1eb0161153691e2da1a13c1ce739d5a7d8fd3f92b73d3d333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Buchheim, C.</creatorcontrib><creatorcontrib>Goldhahn, R.</creatorcontrib><creatorcontrib>Gobsch, G.</creatorcontrib><creatorcontrib>Tonisch, K.</creatorcontrib><creatorcontrib>Cimalla, V.</creatorcontrib><creatorcontrib>Niebelschütz, F.</creatorcontrib><creatorcontrib>Ambacher, O.</creatorcontrib><title>Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas</title><title>Applied physics letters</title><description>Ga-face GaN∕AlGaN∕GaN heterostructures with different cap thicknesses are investigated by electroreflectance spectroscopy (ER). The voltage dependent electric field strengths of the barrier and cap layers are determined. The AlGaN electric field amounts of up to −2.6MV∕cm, whereas the GaN electric field is always below 700kV∕cm. The two electric fields have opposite signs. Characteristic features in the voltage maps of the ER spectra are assigned to the formation/depletion of a two-dimensional electron gas below and a two-dimensional hole gas above the AlGaN barrier. 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The voltage dependent electric field strengths of the barrier and cap layers are determined. The AlGaN electric field amounts of up to −2.6MV∕cm, whereas the GaN electric field is always below 700kV∕cm. The two electric fields have opposite signs. Characteristic features in the voltage maps of the ER spectra are assigned to the formation/depletion of a two-dimensional electron gas below and a two-dimensional hole gas above the AlGaN barrier. Between −6.5 and 0V, both carrier gases coexist.</abstract><doi>10.1063/1.2830836</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-01, Vol.92 (1) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas |
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