Remote phonon scattering in field-effect transistors with a high κ insulating layer
In this paper a remote phonon scattering of channel electrons in a field-effect transistor (FET) with a high dielectric constant ( κ ) insulator in between the gate and the channel is studied theoretically. The spectrum of phonons confined in the high κ layer and its modification by the gate screeni...
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| Veröffentlicht in: | Journal of applied physics 2008-01, Vol.103 (1), p.014501-014501-16 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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