Measurement of incomplete strain relaxation in a silicon heteroepitaxial film by geometrical phase analysis in the transmission electron microscope
Relaxation of strain by a partial dislocation and stacking fault in a strained Si film was characterized using geometric phase analysis of high-resolution transmission electron microscope (HRTEM) images. Movement of a 60° glide dislocation from the free surface to the film-substrate interface create...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2007-12, Vol.91 (23) |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!