Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb

Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb

The point contact Andreev reflection technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While conventional Andreev reflection has been demonstrated in (In,Mn)Sb, quasiparticle...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2007-12, Vol.91 (25)
Hauptverfasser: Panguluri, Raghava P., Nadgorny, B., Wojtowicz, T., Liu, X., Furdyna, J. K.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 25
container_start_page
container_title Applied physics letters
container_volume 91
creator Panguluri, Raghava P.
Nadgorny, B.
Wojtowicz, T.
Liu, X.
Furdyna, J. K.
description The point contact Andreev reflection technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While conventional Andreev reflection has been demonstrated in (In,Mn)Sb, quasiparticle density of states broadening has been observed in (Ga,Mn)As, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ∼10K. The spin polarization of 57±5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.
doi_str_mv 10.1063/1.2819608
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2819608</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2819608</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-e2b56a83ee2e7d79e1dda0c6ed99fd69c95fa8dbc0083e5e2b169fedf5285a23</originalsourceid><addsrcrecordid>eNotkD1PwzAURS0EEqEw8A88UokUf8hOPKIKSqUiBsocvdgvlVHiRLY7wK8nQKerI917h0PILWcrzrR84CtRc6NZfUYKzqqqlJzX56RgjMlSG8UvyVVKnzMqIWVBPrYBe0jZW5os5IzRhwOF4GiafKDT2EP035D9GOjMzvfHjHSAQ8C_DQ7ejsEdbR4jvdvA_WtYvrfX5KKDPuHNKRdk__y0X7-Uu7fNdv24K60QJpcoWqWhlogCK1cZ5M4BsxqdMZ3TxhrVQe1ay9hcUnOda9Oh65SoFQi5IMv_WxvHlCJ2zRT9APGr4az51dHw5qRD_gDQrFOp</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Panguluri, Raghava P. ; Nadgorny, B. ; Wojtowicz, T. ; Liu, X. ; Furdyna, J. K.</creator><creatorcontrib>Panguluri, Raghava P. ; Nadgorny, B. ; Wojtowicz, T. ; Liu, X. ; Furdyna, J. K.</creatorcontrib><description>The point contact Andreev reflection technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While conventional Andreev reflection has been demonstrated in (In,Mn)Sb, quasiparticle density of states broadening has been observed in (Ga,Mn)As, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ∼10K. The spin polarization of 57±5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2819608</identifier><language>eng</language><ispartof>Applied physics letters, 2007-12, Vol.91 (25)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-e2b56a83ee2e7d79e1dda0c6ed99fd69c95fa8dbc0083e5e2b169fedf5285a23</citedby><cites>FETCH-LOGICAL-c229t-e2b56a83ee2e7d79e1dda0c6ed99fd69c95fa8dbc0083e5e2b169fedf5285a23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Panguluri, Raghava P.</creatorcontrib><creatorcontrib>Nadgorny, B.</creatorcontrib><creatorcontrib>Wojtowicz, T.</creatorcontrib><creatorcontrib>Liu, X.</creatorcontrib><creatorcontrib>Furdyna, J. K.</creatorcontrib><title>Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb</title><title>Applied physics letters</title><description>The point contact Andreev reflection technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While conventional Andreev reflection has been demonstrated in (In,Mn)Sb, quasiparticle density of states broadening has been observed in (Ga,Mn)As, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ∼10K. The spin polarization of 57±5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNotkD1PwzAURS0EEqEw8A88UokUf8hOPKIKSqUiBsocvdgvlVHiRLY7wK8nQKerI917h0PILWcrzrR84CtRc6NZfUYKzqqqlJzX56RgjMlSG8UvyVVKnzMqIWVBPrYBe0jZW5os5IzRhwOF4GiafKDT2EP035D9GOjMzvfHjHSAQ8C_DQ7ejsEdbR4jvdvA_WtYvrfX5KKDPuHNKRdk__y0X7-Uu7fNdv24K60QJpcoWqWhlogCK1cZ5M4BsxqdMZ3TxhrVQe1ay9hcUnOda9Oh65SoFQi5IMv_WxvHlCJ2zRT9APGr4az51dHw5qRD_gDQrFOp</recordid><startdate>20071217</startdate><enddate>20071217</enddate><creator>Panguluri, Raghava P.</creator><creator>Nadgorny, B.</creator><creator>Wojtowicz, T.</creator><creator>Liu, X.</creator><creator>Furdyna, J. K.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20071217</creationdate><title>Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb</title><author>Panguluri, Raghava P. ; Nadgorny, B. ; Wojtowicz, T. ; Liu, X. ; Furdyna, J. K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-e2b56a83ee2e7d79e1dda0c6ed99fd69c95fa8dbc0083e5e2b169fedf5285a23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Panguluri, Raghava P.</creatorcontrib><creatorcontrib>Nadgorny, B.</creatorcontrib><creatorcontrib>Wojtowicz, T.</creatorcontrib><creatorcontrib>Liu, X.</creatorcontrib><creatorcontrib>Furdyna, J. K.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Panguluri, Raghava P.</au><au>Nadgorny, B.</au><au>Wojtowicz, T.</au><au>Liu, X.</au><au>Furdyna, J. K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb</atitle><jtitle>Applied physics letters</jtitle><date>2007-12-17</date><risdate>2007</risdate><volume>91</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The point contact Andreev reflection technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While conventional Andreev reflection has been demonstrated in (In,Mn)Sb, quasiparticle density of states broadening has been observed in (Ga,Mn)As, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ∼10K. The spin polarization of 57±5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.</abstract><doi>10.1063/1.2819608</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2007-12, Vol.91 (25)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_2819608
source AIP Journals Complete; AIP Digital Archive
title Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T02%3A14%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Inelastic%20scattering%20and%20spin%20polarization%20in%20dilute%20magnetic%20semiconductor%20(Ga,Mn)Sb&rft.jtitle=Applied%20physics%20letters&rft.au=Panguluri,%20Raghava%20P.&rft.date=2007-12-17&rft.volume=91&rft.issue=25&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2819608&rft_dat=%3Ccrossref%3E10_1063_1_2819608%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true