Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature
We fabricated air-bridge-type silicon photonic crystal (PC) nanocavities and observed significant enhancement of photoluminescence (PL) from crystalline silicon at room temperature. Cavity-resonant peaks shifted toward longer wavelengths when the period of PC was increased and their polarization dep...
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Veröffentlicht in: | Applied physics letters 2007-11, Vol.91 (21), p.211104-211104-3 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We fabricated air-bridge-type silicon photonic crystal (PC) nanocavities and observed significant enhancement of photoluminescence (PL) from crystalline silicon at room temperature. Cavity-resonant peaks shifted toward longer wavelengths when the period of PC was increased and their polarization dependences agree with the calculation. At a cavity mode wavelength, a 310-fold enhancement of PL intensity, compared with that of unpatterned silicon-on-insulator substrate, was demonstrated. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2816892 |