Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature

We fabricated air-bridge-type silicon photonic crystal (PC) nanocavities and observed significant enhancement of photoluminescence (PL) from crystalline silicon at room temperature. Cavity-resonant peaks shifted toward longer wavelengths when the period of PC was increased and their polarization dep...

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Veröffentlicht in:Applied physics letters 2007-11, Vol.91 (21), p.211104-211104-3
Hauptverfasser: Iwamoto, Satoshi, Arakawa, Yasuhiko, Gomyo, Akiko
Format: Artikel
Sprache:eng
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Zusammenfassung:We fabricated air-bridge-type silicon photonic crystal (PC) nanocavities and observed significant enhancement of photoluminescence (PL) from crystalline silicon at room temperature. Cavity-resonant peaks shifted toward longer wavelengths when the period of PC was increased and their polarization dependences agree with the calculation. At a cavity mode wavelength, a 310-fold enhancement of PL intensity, compared with that of unpatterned silicon-on-insulator substrate, was demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2816892