Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy

Intentionally undoped p-type β-FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of β-FeSi2. The hole mobility increased and the hol...

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Veröffentlicht in:	Journal of applied physics 2007-11, Vol.102 (10)
Hauptverfasser:	Suzuno, M., Ugajin, Y., Murase, S., Suemasu, T., Uchikoshi, M., Isshiki, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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