Damage-free electrodes fabrication for top emitting organic light emitting diodes by transfer fabrication
We report a simple procedure for the integration of the top emitting organic light emitting diode (TOLED), which permits minimum defects at the interface between a top metal electrode and an organic film. This method relies on the transfer of patterned metal electrodes to an organic substrate with a...
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Veröffentlicht in: | Applied physics letters 2007-11, Vol.91 (19), p.192505-192505-3 |
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container_title | Applied physics letters |
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creator | Seo, Soon-Min Jang, Chang-Hyun |
description | We report a simple procedure for the integration of the top emitting organic light emitting diode (TOLED), which permits minimum defects at the interface between a top metal electrode and an organic film. This method relies on the transfer of patterned metal electrodes to an organic substrate with a relatively high adhesive property. TOLED, integrated by the transfer fabrication, demonstrates better performance, a reduction of turn-on voltage and an increase of maximum current efficiency, in comparison with fabricated devices by conventional shadow mask method. |
doi_str_mv | 10.1063/1.2806274 |
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This method relies on the transfer of patterned metal electrodes to an organic substrate with a relatively high adhesive property. TOLED, integrated by the transfer fabrication, demonstrates better performance, a reduction of turn-on voltage and an increase of maximum current efficiency, in comparison with fabricated devices by conventional shadow mask method.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2806274</doi></addata></record> |
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title | Damage-free electrodes fabrication for top emitting organic light emitting diodes by transfer fabrication |
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