Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films
Dysprosium- and scandium-doped Hf O 2 films have been deposited by atomic-vapor deposition on Si O 2 ∕ Si substrates. Glancing-incidence x-ray diffraction demonstrates that Dy 0.10 Hf 0.90 O x and Sc 0.10 Hf 0.90 O x films show a cubic crystal structure, whereas Hf O 2 films are monoclinic. The diel...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2007-10, Vol.91 (16), p.162902-162902-3 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 162902-3 |
|---|---|
| container_issue | 16 |
| container_start_page | 162902 |
| container_title | Applied physics letters |
| container_volume | 91 |
| creator | Adelmann, C. Sriramkumar, V. Van Elshocht, S. Lehnen, P. Conard, T. De Gendt, S. |
| description | Dysprosium- and scandium-doped
Hf
O
2
films have been deposited by atomic-vapor deposition on
Si
O
2
∕
Si
substrates. Glancing-incidence x-ray diffraction demonstrates that
Dy
0.10
Hf
0.90
O
x
and
Sc
0.10
Hf
0.90
O
x
films show a cubic crystal structure, whereas
Hf
O
2
films are monoclinic. The dielectric permittivity increases strongly from 16 for
Hf
O
2
to 32 for
Dy
0.10
Hf
0.90
O
x
and
Sc
0.10
Hf
0.90
O
x
. This leads to a reduction of the leakage current in the tunneling regime by up to three orders of magnitude for constant effective oxide thickness. For thick films
(
≳
6
nm
)
, it is shown that leakage occurs via the Poole-Frenkel mechanism and that doping
Hf
O
2
increases leakage for constant physical oxide thickness. |
| doi_str_mv | 10.1063/1.2798498 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2798498</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-ba356d4880efdbc2b869bd0338fbaac8cc4de91cca1f502e5a131a8315f93353</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMouFYP_oNcPWzN7Gx2sxdBqlWhIEjvIZsPGtkvkhXsvzelRU9eZnhfHobhIeQW2BJYhfewLOpGlI04Ixmwus4RQJyTjDGGedVwuCRXMX6myAvEjHw8edtZPQev6RTGyYbZ20hHR80-piL6rz6najA06jQPySTK0J1yQ0rU-PHbG0vnnR-o810fr8mFU120N6e9INv183b1mm_eX95Wj5tcF6Kc81Yhr0wpBLPOtLpoRdW0hiEK1yqlhdalsQ1orcBxVliuAEEJBO4aRI4Lcnc8q9OXMVgnp-B7FfYSmDy4kCBPLhL7cGSj9rOa_Tj8D_8Jkb9C8AeU62hw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Adelmann, C. ; Sriramkumar, V. ; Van Elshocht, S. ; Lehnen, P. ; Conard, T. ; De Gendt, S.</creator><creatorcontrib>Adelmann, C. ; Sriramkumar, V. ; Van Elshocht, S. ; Lehnen, P. ; Conard, T. ; De Gendt, S.</creatorcontrib><description>Dysprosium- and scandium-doped
Hf
O
2
films have been deposited by atomic-vapor deposition on
Si
O
2
∕
Si
substrates. Glancing-incidence x-ray diffraction demonstrates that
Dy
0.10
Hf
0.90
O
x
and
Sc
0.10
Hf
0.90
O
x
films show a cubic crystal structure, whereas
Hf
O
2
films are monoclinic. The dielectric permittivity increases strongly from 16 for
Hf
O
2
to 32 for
Dy
0.10
Hf
0.90
O
x
and
Sc
0.10
Hf
0.90
O
x
. This leads to a reduction of the leakage current in the tunneling regime by up to three orders of magnitude for constant effective oxide thickness. For thick films
(
≳
6
nm
)
, it is shown that leakage occurs via the Poole-Frenkel mechanism and that doping
Hf
O
2
increases leakage for constant physical oxide thickness.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2798498</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-10, Vol.91 (16), p.162902-162902-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-ba356d4880efdbc2b869bd0338fbaac8cc4de91cca1f502e5a131a8315f93353</citedby><cites>FETCH-LOGICAL-c284t-ba356d4880efdbc2b869bd0338fbaac8cc4de91cca1f502e5a131a8315f93353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2798498$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,777,781,791,1554,4498,27905,27906,76133,76139</link.rule.ids></links><search><creatorcontrib>Adelmann, C.</creatorcontrib><creatorcontrib>Sriramkumar, V.</creatorcontrib><creatorcontrib>Van Elshocht, S.</creatorcontrib><creatorcontrib>Lehnen, P.</creatorcontrib><creatorcontrib>Conard, T.</creatorcontrib><creatorcontrib>De Gendt, S.</creatorcontrib><title>Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films</title><title>Applied physics letters</title><description>Dysprosium- and scandium-doped
Hf
O
2
films have been deposited by atomic-vapor deposition on
Si
O
2
∕
Si
substrates. Glancing-incidence x-ray diffraction demonstrates that
Dy
0.10
Hf
0.90
O
x
and
Sc
0.10
Hf
0.90
O
x
films show a cubic crystal structure, whereas
Hf
O
2
films are monoclinic. The dielectric permittivity increases strongly from 16 for
Hf
O
2
to 32 for
Dy
0.10
Hf
0.90
O
x
and
Sc
0.10
Hf
0.90
O
x
. This leads to a reduction of the leakage current in the tunneling regime by up to three orders of magnitude for constant effective oxide thickness. For thick films
(
≳
6
nm
)
, it is shown that leakage occurs via the Poole-Frenkel mechanism and that doping
Hf
O
2
increases leakage for constant physical oxide thickness.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMouFYP_oNcPWzN7Gx2sxdBqlWhIEjvIZsPGtkvkhXsvzelRU9eZnhfHobhIeQW2BJYhfewLOpGlI04Ixmwus4RQJyTjDGGedVwuCRXMX6myAvEjHw8edtZPQev6RTGyYbZ20hHR80-piL6rz6najA06jQPySTK0J1yQ0rU-PHbG0vnnR-o810fr8mFU120N6e9INv183b1mm_eX95Wj5tcF6Kc81Yhr0wpBLPOtLpoRdW0hiEK1yqlhdalsQ1orcBxVliuAEEJBO4aRI4Lcnc8q9OXMVgnp-B7FfYSmDy4kCBPLhL7cGSj9rOa_Tj8D_8Jkb9C8AeU62hw</recordid><startdate>20071015</startdate><enddate>20071015</enddate><creator>Adelmann, C.</creator><creator>Sriramkumar, V.</creator><creator>Van Elshocht, S.</creator><creator>Lehnen, P.</creator><creator>Conard, T.</creator><creator>De Gendt, S.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20071015</creationdate><title>Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films</title><author>Adelmann, C. ; Sriramkumar, V. ; Van Elshocht, S. ; Lehnen, P. ; Conard, T. ; De Gendt, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-ba356d4880efdbc2b869bd0338fbaac8cc4de91cca1f502e5a131a8315f93353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Adelmann, C.</creatorcontrib><creatorcontrib>Sriramkumar, V.</creatorcontrib><creatorcontrib>Van Elshocht, S.</creatorcontrib><creatorcontrib>Lehnen, P.</creatorcontrib><creatorcontrib>Conard, T.</creatorcontrib><creatorcontrib>De Gendt, S.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Adelmann, C.</au><au>Sriramkumar, V.</au><au>Van Elshocht, S.</au><au>Lehnen, P.</au><au>Conard, T.</au><au>De Gendt, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films</atitle><jtitle>Applied physics letters</jtitle><date>2007-10-15</date><risdate>2007</risdate><volume>91</volume><issue>16</issue><spage>162902</spage><epage>162902-3</epage><pages>162902-162902-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Dysprosium- and scandium-doped
Hf
O
2
films have been deposited by atomic-vapor deposition on
Si
O
2
∕
Si
substrates. Glancing-incidence x-ray diffraction demonstrates that
Dy
0.10
Hf
0.90
O
x
and
Sc
0.10
Hf
0.90
O
x
films show a cubic crystal structure, whereas
Hf
O
2
films are monoclinic. The dielectric permittivity increases strongly from 16 for
Hf
O
2
to 32 for
Dy
0.10
Hf
0.90
O
x
and
Sc
0.10
Hf
0.90
O
x
. This leads to a reduction of the leakage current in the tunneling regime by up to three orders of magnitude for constant effective oxide thickness. For thick films
(
≳
6
nm
)
, it is shown that leakage occurs via the Poole-Frenkel mechanism and that doping
Hf
O
2
increases leakage for constant physical oxide thickness.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2798498</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2007-10, Vol.91 (16), p.162902-162902-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2798498 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T08%3A57%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dielectric%20properties%20of%20dysprosium-%20and%20scandium-doped%20hafnium%20dioxide%20thin%20films&rft.jtitle=Applied%20physics%20letters&rft.au=Adelmann,%20C.&rft.date=2007-10-15&rft.volume=91&rft.issue=16&rft.spage=162902&rft.epage=162902-3&rft.pages=162902-162902-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.2798498&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |