Current-induced domain wall depinning and magnetoresistance in La0.7Sr0.3MnO3 planar spin valves

The authors have performed experiments on current-induced domain wall (DW) displacement in La0.7Sr0.3MnO3 nanostructures patterned by gallium (Ga) focused-ion-beam milling. A dc current is found to assist or hinder, according to polarity, an external magnetic field in the depinning of a DW trapped i...

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Veröffentlicht in:	Applied physics letters 2007-09, Vol.91 (13)
Hauptverfasser:	Ruotolo, A., Oropallo, A., Miletto Granozio, F., Pepe, G. P., Perna, P., di Uccio, U. Scotti, Pullini, D.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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