Three-dimensional atomic-scale mapping of Pd in Ni1−xPdxSi∕Si(100) thin films
Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing ex...
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| Veröffentlicht in: | Applied physics letters 2007-09, Vol.91 (11) |
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| container_title | Applied physics letters |
| container_volume | 91 |
| creator | Kim, Yeong-Cheol Adusumilli, Praneet Lauhon, Lincoln J. Seidman, David N. Jung, Soon-Yen Lee, Hi-Deok Alvis, Roger L. Ulfig, Rob M. Olson, Jesse D. |
| description | Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95Pd0.05)Si∕Si(100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated. |
| doi_str_mv | 10.1063/1.2784196 |
| format | Article |
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A solid-solution Ni0.95Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95Pd0.05)Si∕Si(100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2784196</identifier><language>eng</language><ispartof>Applied physics letters, 2007-09, Vol.91 (11)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c159t-5d688e818ea2421923ef1e6bbeada1befab2d5b7d79e71a607809811cccef1533</citedby><cites>FETCH-LOGICAL-c159t-5d688e818ea2421923ef1e6bbeada1befab2d5b7d79e71a607809811cccef1533</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Kim, Yeong-Cheol</creatorcontrib><creatorcontrib>Adusumilli, Praneet</creatorcontrib><creatorcontrib>Lauhon, Lincoln J.</creatorcontrib><creatorcontrib>Seidman, David N.</creatorcontrib><creatorcontrib>Jung, Soon-Yen</creatorcontrib><creatorcontrib>Lee, Hi-Deok</creatorcontrib><creatorcontrib>Alvis, Roger L.</creatorcontrib><creatorcontrib>Ulfig, Rob M.</creatorcontrib><creatorcontrib>Olson, Jesse D.</creatorcontrib><title>Three-dimensional atomic-scale mapping of Pd in Ni1−xPdxSi∕Si(100) thin films</title><title>Applied physics letters</title><description>Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). 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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2007-09, Vol.91 (11) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2784196 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Three-dimensional atomic-scale mapping of Pd in Ni1−xPdxSi∕Si(100) thin films |
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