Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55 μ m quantum dot lasers

InAs quantum dots (QDs) on InP were implemented as active layers in laser structures completely grown by metal organic vapor phase epitaxy (MOVPE). In laser structures due to growth of the upper InP cladding layers onto the QDs, a marked blueshift of the emission wavelength and a simultaneous degrad...

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Veröffentlicht in:	Applied physics letters 2007-08, Vol.91 (8), p.081117-081117-3
Hauptverfasser:	Franke, D., Moehrle, M., Boettcher, J., Harde, P., Sigmund, A., Kuenzel, H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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